New types of composite scintillators based on the single crystalline films and crystals of Gd3Al5-xGaxO12:Ce garnets

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00570716" target="_blank" >RIV/68378271:_____/23:00570716 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0342046" target="_blank" >https://hdl.handle.net/11104/0342046</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.omx.2023.100227" target="_blank" >10.1016/j.omx.2023.100227</a>

Jazyk výsledku

angličtina

Název v původním jazyce

New types of composite scintillators based on the single crystalline films and crystals of Gd3Al5-xGaxO12:Ce garnets

Popis výsledku v původním jazyce

This work presents the results on creation of novel types of composite scintillators based on Ce3+ doped Gd3Al5-xGaxO12 single crystalline films grown by the LPE method using PbO–B2O3 flux onto substrate-scintillators prepared from commercial Gd3Al2.3Ga2.7O12:Ce and Gd3Al2Ga3O12:Ce single crystals. The sets of films with different Ga contents x = 1.75–2.25 and various thicknesses in the 13–150 μm range were grown onto the mentioned substrates. The scintillation properties of the respective epitaxial structures (pulse height spectra, light yield and scintillation decay kinetics) were investigated under excitation by α– (239Pu) particles, β-(90Sr+90Y) particles and γ–quanta (137Cs). The best scintillation properties for simultaneous registration of the mentioned particles and quanta in the mixed radiation fluxes are demonstrated with Gd3Al2.75Ga2.25O12 film/Gd3Al2Ga3O12:Ce substrate epitaxial structure.

Název v anglickém jazyce

New types of composite scintillators based on the single crystalline films and crystals of Gd3Al5-xGaxO12:Ce garnets

Popis výsledku anglicky

This work presents the results on creation of novel types of composite scintillators based on Ce3+ doped Gd3Al5-xGaxO12 single crystalline films grown by the LPE method using PbO–B2O3 flux onto substrate-scintillators prepared from commercial Gd3Al2.3Ga2.7O12:Ce and Gd3Al2Ga3O12:Ce single crystals. The sets of films with different Ga contents x = 1.75–2.25 and various thicknesses in the 13–150 μm range were grown onto the mentioned substrates. The scintillation properties of the respective epitaxial structures (pulse height spectra, light yield and scintillation decay kinetics) were investigated under excitation by α– (239Pu) particles, β-(90Sr+90Y) particles and γ–quanta (137Cs). The best scintillation properties for simultaneous registration of the mentioned particles and quanta in the mixed radiation fluxes are demonstrated with Gd3Al2.75Ga2.25O12 film/Gd3Al2Ga3O12:Ce substrate epitaxial structure.

Druh

J_SC - Článek v periodiku v databázi SCOPUS

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Optical Materials: X

ISSN

2590-1478

e-ISSN

—

Svazek periodika

17

Číslo periodika v rámci svazku

Feb

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

100227

Kód UT WoS článku

—

EID výsledku v databázi Scopus

2-s2.0-85146693197