Charge transport in single-crystalline GaAs nanobars: impact of band bending revealed by terahertz spectroscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00552412" target="_blank" >RIV/68378271:_____/22:00552412 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/22:10455650

Výsledek na webu

<a href="https://doi.org/10.1002/adfm.202107403" target="_blank" >https://doi.org/10.1002/adfm.202107403</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/adfm.202107403" target="_blank" >10.1002/adfm.202107403</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Charge transport in single-crystalline GaAs nanobars: impact of band bending revealed by terahertz spectroscopy

Popis výsledku v původním jazyce

Arrays of ultimate-quality single-crystalline GaAs nanobars are prepared via electron-beam lithography in a molecular-beam-epitaxy-grown GaAs layer transferred onto an electrically insulating and optically and terahertz transparent sapphire substrate. Measurements of ultrafast terahertz photoconductivity at 300 and 20 K in an array of such aligned nanobars by time-resolved THz and multi-THz spectroscopy and by time-resolved terahertz scanning near-field microscopy allow an in-depth understanding of the nanoscale electron motion inside the nanobars. A detailed analysis is performed in terms of quantum mechanical calculations of the mobility of carriers and in terms of plasmonic resonance controlled by photocarrier density. The investigations reveal a band bending close to the nanobar surfaces and its prominent effects on the picosecond charge carrier dynamics, leading to an enhanced localization of electrons at longer times.

Název v anglickém jazyce

Charge transport in single-crystalline GaAs nanobars: impact of band bending revealed by terahertz spectroscopy

Popis výsledku anglicky

Arrays of ultimate-quality single-crystalline GaAs nanobars are prepared via electron-beam lithography in a molecular-beam-epitaxy-grown GaAs layer transferred onto an electrically insulating and optically and terahertz transparent sapphire substrate. Measurements of ultrafast terahertz photoconductivity at 300 and 20 K in an array of such aligned nanobars by time-resolved THz and multi-THz spectroscopy and by time-resolved terahertz scanning near-field microscopy allow an in-depth understanding of the nanoscale electron motion inside the nanobars. A detailed analysis is performed in terms of quantum mechanical calculations of the mobility of carriers and in terms of plasmonic resonance controlled by photocarrier density. The investigations reveal a band bending close to the nanobar surfaces and its prominent effects on the picosecond charge carrier dynamics, leading to an enhanced localization of electrons at longer times.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced Functional Materials

ISSN

1616-301X

e-ISSN

1616-3028

Svazek periodika

32

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

9

Strana od-do

2107403

Kód UT WoS článku

000720265300001

EID výsledku v databázi Scopus

2-s2.0-85119333243