Diamond thin films for PV solar cells on the base of a-SiC:H alloy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00568245" target="_blank" >RIV/68378271:_____/22:00568245 - isvavai.cz</a>

Výsledek na webu

<a href="https://ieeexplore.ieee.org/document/9989037" target="_blank" >https://ieeexplore.ieee.org/document/9989037</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/GTSD54989.2022.9989037" target="_blank" >10.1109/GTSD54989.2022.9989037</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Diamond thin films for PV solar cells on the base of a-SiC:H alloy

Popis výsledku v původním jazyce

Thin-film photovoltaic (PV) cells based on a-Si:H have been and still are optimized. In this work, we present PV cells based on a-SiC:H alloys with low carbon content deposited (compared to PV cells based only on a-Si:H) at elevated temperatures. The increased deposition temperature is in line with the deposition temperatures for consequent diamond layer deposition and helps to stabilize the achieved energy conversion efficiency. Thin diamond layers act as optically transparent material with a wide bandgap (5.47 eV) and a high optical refractive index (2.41). The outstanding properties of diamond are high chemical resistance, high mechanical hardness, and high thermal conductivity. Technological processes make it possible to diverge diamond from nanocrystalline to microcrystalline layers. The diamond crystal size governs the efficiency of the scattering of the incident light and its increased absorption in the connected structure of the PV cell. Both of these properties – high thermal conductivity and optimized layer roughness – are excellent prerequisites for the new structuring of thin-film PV cells. By efficient heat dissipation, PV cells operate in a mode of lower temperatures and thus higher energy conversion efficiency, even in the systems loaded with highly concentrated solar energy.

Název v anglickém jazyce

Diamond thin films for PV solar cells on the base of a-SiC:H alloy

Popis výsledku anglicky

Thin-film photovoltaic (PV) cells based on a-Si:H have been and still are optimized. In this work, we present PV cells based on a-SiC:H alloys with low carbon content deposited (compared to PV cells based only on a-Si:H) at elevated temperatures. The increased deposition temperature is in line with the deposition temperatures for consequent diamond layer deposition and helps to stabilize the achieved energy conversion efficiency. Thin diamond layers act as optically transparent material with a wide bandgap (5.47 eV) and a high optical refractive index (2.41). The outstanding properties of diamond are high chemical resistance, high mechanical hardness, and high thermal conductivity. Technological processes make it possible to diverge diamond from nanocrystalline to microcrystalline layers. The diamond crystal size governs the efficiency of the scattering of the incident light and its increased absorption in the connected structure of the PV cell. Both of these properties – high thermal conductivity and optimized layer roughness – are excellent prerequisites for the new structuring of thin-film PV cells. By efficient heat dissipation, PV cells operate in a mode of lower temperatures and thus higher energy conversion efficiency, even in the systems loaded with highly concentrated solar energy.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the International Conference on Green Technology and Sustainable Development (GTSD2022)

ISBN

978-166546628-8

ISSN

—

e-ISSN

—

Počet stran výsledku

4

Strana od-do

982-985

Název nakladatele

IEEE

Místo vydání

New York

Místo konání akce

Nha Trang City

Datum konání akce

29. 7. 2022

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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