Hybrid detector based on MOVPE grown InGaN/GaN MQW + BGO
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00570907" target="_blank" >RIV/68378271:_____/22:00570907 - isvavai.cz</a>
Výsledek na webu
—
DOI - Digital Object Identifier
—
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Hybrid detector based on MOVPE grown InGaN/GaN MQW + BGO
Popis výsledku v původním jazyce
The work focus on description of MOVPE InGaN/GaN MQW scintillation structures. Scintillator works as a convertor of high-energy ionizing radiation to the radiation usually in the visible part of spectrum. These particles can be X-ray, gamma radiation or alpha, beta or proton particles. Preparation, properties and problems of MOVPE InGaN/GaN scintillators with MQW structures are discused. Efficient detection of high-energy ionizing radiation requires thick active region. The highest distance of two adjacent QWs ought to be lower than diffusion length of GaN exciton. This makes thick enough MQW structures infeasible because of structure polarization, strength, dislocations, other defects. We have realized alternative solution, which is a hybrid sandwich InGaN/GaN MQW + BGO (Bi4Ge3O12) detector. It is composed from 12 InGaN/GaN scintillators (4 scintillators joined in the stack) and enclosed by two BGO bulk scintillators 350 μm thick.
Název v anglickém jazyce
Hybrid detector based on MOVPE grown InGaN/GaN MQW + BGO
Popis výsledku anglicky
The work focus on description of MOVPE InGaN/GaN MQW scintillation structures. Scintillator works as a convertor of high-energy ionizing radiation to the radiation usually in the visible part of spectrum. These particles can be X-ray, gamma radiation or alpha, beta or proton particles. Preparation, properties and problems of MOVPE InGaN/GaN scintillators with MQW structures are discused. Efficient detection of high-energy ionizing radiation requires thick active region. The highest distance of two adjacent QWs ought to be lower than diffusion length of GaN exciton. This makes thick enough MQW structures infeasible because of structure polarization, strength, dislocations, other defects. We have realized alternative solution, which is a hybrid sandwich InGaN/GaN MQW + BGO (Bi4Ge3O12) detector. It is composed from 12 InGaN/GaN scintillators (4 scintillators joined in the stack) and enclosed by two BGO bulk scintillators 350 μm thick.
Klasifikace
Druh
O - Ostatní výsledky
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2022
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů