Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf0.5Zr0.5O2/TiN device

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00571425" target="_blank" >RIV/68378271:_____/22:00571425 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0342651" target="_blank" >https://hdl.handle.net/11104/0342651</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/2632-959X/ac5be5" target="_blank" >10.1088/2632-959X/ac5be5</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf0.5Zr0.5O2/TiN device

Popis výsledku v původním jazyce

Hf0.5 Zr 0.5 O 2 (HZO) is an appropriate material for the back-end-of-line (BEOL) process in fabricating ferroelectric TiN/HZO/TiN devices because of its excellent conformality on 3D nanostructures and a suitable crystallization temperature (… 350 °C–400 °C). However, in the semiconductor industry, the deposition temperature of TiN is usually higher than 400 °C. Therefore, it is necessary to study the ferroelectric properties of TiN/HZO/TiN devices when the deposition temperature of the TiN top electrode is higher than the HZO film crystallization temperature. In this study, 10-nm-thick TiN top electrodes were deposited at various temperatures on the HZO thin film to investigate the impact of the TiN deposition temperature on the structural features and ferroelectric properties of TiN/HZO/TiN capacitors. Only the sample capped with a TiN top electrode deposited at 400 °C showed ferroelectric properties without subsequent annealing (in situ crystallization).

Název v anglickém jazyce

Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf0.5Zr0.5O2/TiN device

Popis výsledku anglicky

Hf0.5 Zr 0.5 O 2 (HZO) is an appropriate material for the back-end-of-line (BEOL) process in fabricating ferroelectric TiN/HZO/TiN devices because of its excellent conformality on 3D nanostructures and a suitable crystallization temperature (… 350 °C–400 °C). However, in the semiconductor industry, the deposition temperature of TiN is usually higher than 400 °C. Therefore, it is necessary to study the ferroelectric properties of TiN/HZO/TiN devices when the deposition temperature of the TiN top electrode is higher than the HZO film crystallization temperature. In this study, 10-nm-thick TiN top electrodes were deposited at various temperatures on the HZO thin film to investigate the impact of the TiN deposition temperature on the structural features and ferroelectric properties of TiN/HZO/TiN capacitors. Only the sample capped with a TiN top electrode deposited at 400 °C showed ferroelectric properties without subsequent annealing (in situ crystallization).

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nano Express

ISSN

2632-959X

e-ISSN

2632-959X

Svazek periodika

3

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

11

Strana od-do

015004

Kód UT WoS článku

000899232700001

EID výsledku v databázi Scopus

2-s2.0-85129313902