Depth profiling of AlN and Alx Ga 1−x N crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00570709" target="_blank" >RIV/68378271:_____/23:00570709 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1063/5.0125938" target="_blank" >https://doi.org/10.1063/5.0125938</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0125938" target="_blank" >10.1063/5.0125938</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Depth profiling of AlN and Alx Ga 1−x N crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source

Popis výsledku v původním jazyce

AlGaN-based heterostructures are promising candidates for the fabrication of ultraviolet light-emitting diodes. The analysis of the atomic composition of the grown epitaxial films is important from a technological point of view, allowing precise control over the wavelength and intensity of the emitted light. In this work, the depth profiling of AlN(0001), AlGaN(0001), and AlGaN quantum dot surfaces grown by molecular beam epitaxy was carried out by using angle-resolved x-ray photoelectron spectroscopy (XPS) combined with Ar gas cluster ion source (GCIS) sputtering. Depth profiling with a typical surface-sensitive Al Kα photon source is affected by the damaged layer. The application of a less surface-sensitive Ag Lα photon source with high photon energy could suppress the contribution from the damaged surface layer. Combining GCIS sputtering with Ag Lα is very promising for the quantification of atomic composition of heterostructures with thicknesses of several tens of nm.

Název v anglickém jazyce

Depth profiling of AlN and Alx Ga 1−x N crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source

Popis výsledku anglicky

AlGaN-based heterostructures are promising candidates for the fabrication of ultraviolet light-emitting diodes. The analysis of the atomic composition of the grown epitaxial films is important from a technological point of view, allowing precise control over the wavelength and intensity of the emitted light. In this work, the depth profiling of AlN(0001), AlGaN(0001), and AlGaN quantum dot surfaces grown by molecular beam epitaxy was carried out by using angle-resolved x-ray photoelectron spectroscopy (XPS) combined with Ar gas cluster ion source (GCIS) sputtering. Depth profiling with a typical surface-sensitive Al Kα photon source is affected by the damaged layer. The application of a less surface-sensitive Ag Lα photon source with high photon energy could suppress the contribution from the damaged surface layer. Combining GCIS sputtering with Ag Lα is very promising for the quantification of atomic composition of heterostructures with thicknesses of several tens of nm.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

1089-7550

Svazek periodika

133

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

13

Strana od-do

035301

Kód UT WoS článku

001086450400003

EID výsledku v databázi Scopus

2-s2.0-85146641989