A study of the structural properties of GaN implanted by various rare-earth ions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F13%3A00395263" target="_blank" >RIV/61389005:_____/13:00395263 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/44555601:13440/13:43884922 RIV/60461373:22310/13:43895412

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.nimb.2012.11.079" target="_blank" >http://dx.doi.org/10.1016/j.nimb.2012.11.079</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nimb.2012.11.079" target="_blank" >10.1016/j.nimb.2012.11.079</a>

Jazyk výsledku

angličtina

Název v původním jazyce

A study of the structural properties of GaN implanted by various rare-earth ions

Popis výsledku v původním jazyce

GaN layers with < 0001 > crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 x 10(15)-1 x 10(16) cm(-2). The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties of theion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder of the atomsclose to the amorphised structure at the surface layer above an implantation fluence of 5 x 10(15) cm(-2) while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annea

Název v anglickém jazyce

A study of the structural properties of GaN implanted by various rare-earth ions

Popis výsledku anglicky

GaN layers with < 0001 > crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 x 10(15)-1 x 10(16) cm(-2). The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties of theion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder of the atomsclose to the amorphised structure at the surface layer above an implantation fluence of 5 x 10(15) cm(-2) while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annea

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments & Methods in Physics Research Section B

ISSN

0168-583X

e-ISSN

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Svazek periodika

307

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

446-451

Kód UT WoS článku

000321722200099

EID výsledku v databázi Scopus

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