Tiling the silicon for added functionality: PLD growth of highly crystalline STO and PZT on graphene oxide-buffered silicon surface

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00570943" target="_blank" >RIV/68378271:_____/23:00570943 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0342281" target="_blank" >https://hdl.handle.net/11104/0342281</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsami.2c17351" target="_blank" >10.1021/acsami.2c17351</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Tiling the silicon for added functionality: PLD growth of highly crystalline STO and PZT on graphene oxide-buffered silicon surface

Popis výsledku v původním jazyce

Besides acting as a seed layer for van der Waals epitaxy, the 2D materials have enabled wetting transparency in which the potential field of the substrate, is still capable of imposing epitaxial overgrowth. Preservation of the quality of 2D materials during and after their transfer to a substrate of interest is crucial. We show that the traditional epitaxy and wet chemistry a hybrid approach can offers a unique perspective for the integration of functional oxides with a silicon platform. It is based on SrO-assisted deoxidation and controllable coverage of silicon surface with a layer(s) of spin-coated graphene oxide, thus simultaneously allowing both direct and van der Waals epitaxy of SrTiO3 (STO). We were able to grow a high-quality STO pseudosubstrate suitable for further overgrowth of functional oxides, such as PbZr1−xTixO3 (PZT). This approach may provide new routes for direct and “remote” epitaxy or layer-transfer techniques of dissimilar material systems.

Název v anglickém jazyce

Tiling the silicon for added functionality: PLD growth of highly crystalline STO and PZT on graphene oxide-buffered silicon surface

Popis výsledku anglicky

Besides acting as a seed layer for van der Waals epitaxy, the 2D materials have enabled wetting transparency in which the potential field of the substrate, is still capable of imposing epitaxial overgrowth. Preservation of the quality of 2D materials during and after their transfer to a substrate of interest is crucial. We show that the traditional epitaxy and wet chemistry a hybrid approach can offers a unique perspective for the integration of functional oxides with a silicon platform. It is based on SrO-assisted deoxidation and controllable coverage of silicon surface with a layer(s) of spin-coated graphene oxide, thus simultaneously allowing both direct and van der Waals epitaxy of SrTiO3 (STO). We were able to grow a high-quality STO pseudosubstrate suitable for further overgrowth of functional oxides, such as PbZr1−xTixO3 (PZT). This approach may provide new routes for direct and “remote” epitaxy or layer-transfer techniques of dissimilar material systems.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GF21-20110K" target="_blank" >GF21-20110K: Heterostruktury s přechodem polovodič - dielektrikum pro fotoelektrolýzu vody</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Materials and Interfaces

ISSN

1944-8244

e-ISSN

1944-8252

Svazek periodika

15

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

6058-6068

Kód UT WoS článku

000920456500001

EID výsledku v databázi Scopus

2-s2.0-85146559779