Robust SrTiO3 passivation of silicon photocathode by reduced graphene oxide for solar water splitting

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00576644" target="_blank" >RIV/68378271:_____/23:00576644 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0349481" target="_blank" >https://hdl.handle.net/11104/0349481</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsami.3c07747" target="_blank" >10.1021/acsami.3c07747</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Robust SrTiO3 passivation of silicon photocathode by reduced graphene oxide for solar water splitting

Popis výsledku v původním jazyce

Development of a robust photocathode using lowcost and high-performing materials to produce clean fuel hydrogen has remained challenging since the semiconductor substrate is easily susceptible to (photo)corrosion under photoelectrochemical (PEC) operational conditions. A protective layer over the substrate to simultaneously provide corrosion resistance and maintain efficient charge transfer across the device is therefore needed. To this end, in the present work, we utilized pulsed laser deposition (PLD) to prepare a high-quality SrTiO3 (STO) layer to passivate the p-Si substrate using a buffer layer of reduced graphene oxide (rGO). The stability tests demonstrated the soundness of the epitaxial STO layer in passivating Si against corrosion. This study provided a facile approach for preparing a robust protection layer over a photoelectrode substrate in realizing an efficient and, at the same time, durable PEC device.

Název v anglickém jazyce

Robust SrTiO3 passivation of silicon photocathode by reduced graphene oxide for solar water splitting

Popis výsledku anglicky

Development of a robust photocathode using lowcost and high-performing materials to produce clean fuel hydrogen has remained challenging since the semiconductor substrate is easily susceptible to (photo)corrosion under photoelectrochemical (PEC) operational conditions. A protective layer over the substrate to simultaneously provide corrosion resistance and maintain efficient charge transfer across the device is therefore needed. To this end, in the present work, we utilized pulsed laser deposition (PLD) to prepare a high-quality SrTiO3 (STO) layer to passivate the p-Si substrate using a buffer layer of reduced graphene oxide (rGO). The stability tests demonstrated the soundness of the epitaxial STO layer in passivating Si against corrosion. This study provided a facile approach for preparing a robust protection layer over a photoelectrode substrate in realizing an efficient and, at the same time, durable PEC device.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GF21-20110K" target="_blank" >GF21-20110K: Heterostruktury s přechodem polovodič - dielektrikum pro fotoelektrolýzu vody</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Materials and Interfaces

ISSN

1944-8244

e-ISSN

1944-8252

Svazek periodika

15

Číslo periodika v rámci svazku

37

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

44482-44492

Kód UT WoS článku

001066517500001

EID výsledku v databázi Scopus

2-s2.0-85171900524