Optical triggering of a metal-insulator transition in neodymium nickelate films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00572235" target="_blank" >RIV/68378271:_____/23:00572235 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.materresbull.2023.112305" target="_blank" >https://doi.org/10.1016/j.materresbull.2023.112305</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.materresbull.2023.112305" target="_blank" >10.1016/j.materresbull.2023.112305</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optical triggering of a metal-insulator transition in neodymium nickelate films

Popis výsledku v původním jazyce

We have studied photostimulated changes in the electrical resistivity of thin epitaxial films of neodymium nickelate NdNiO3 around its sharp metal-to-insulator transition. It is found that intense light irradiation strongly affects the film resistivity below the transition temperature, where the resistivity is repeatedly switched from high insulating values into low metal-phase levels. We establish that this strong photoresistive effect is likely caused by light-absorption induced heating rather than electronic excitations. Analysis of the temperature-dependent resistivity predicts a significant drop in the film thermal conductivity at the metal-to-insulator transition. The simultaneous abrupt change in two physical parameters: electrical resistivity and thermal conductivity, is responsible for a considerable magnitude of the observed photoresistive effect. This effect can be utilized in novel electronics applications, such as thin-film photodetectors or photoswitches.

Název v anglickém jazyce

Optical triggering of a metal-insulator transition in neodymium nickelate films

Popis výsledku anglicky

We have studied photostimulated changes in the electrical resistivity of thin epitaxial films of neodymium nickelate NdNiO3 around its sharp metal-to-insulator transition. It is found that intense light irradiation strongly affects the film resistivity below the transition temperature, where the resistivity is repeatedly switched from high insulating values into low metal-phase levels. We establish that this strong photoresistive effect is likely caused by light-absorption induced heating rather than electronic excitations. Analysis of the temperature-dependent resistivity predicts a significant drop in the film thermal conductivity at the metal-to-insulator transition. The simultaneous abrupt change in two physical parameters: electrical resistivity and thermal conductivity, is responsible for a considerable magnitude of the observed photoresistive effect. This effect can be utilized in novel electronics applications, such as thin-film photodetectors or photoswitches.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Research Bulletin

ISSN

0025-5408

e-ISSN

1873-4227

Svazek periodika

165

Číslo periodika v rámci svazku

Sep

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

8

Strana od-do

112305

Kód UT WoS článku

000999344400001

EID výsledku v databázi Scopus

2-s2.0-85157986084