Improved gas sensing capabilities of MoS2/diamond heterostructures at room temperature

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00573745" target="_blank" >RIV/68378271:_____/23:00573745 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/23:00367105

Výsledek na webu

<a href="https://hdl.handle.net/11104/0344127" target="_blank" >https://hdl.handle.net/11104/0344127</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsami.3c04438" target="_blank" >10.1021/acsami.3c04438</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Improved gas sensing capabilities of MoS2/diamond heterostructures at room temperature

Popis výsledku v původním jazyce

MoS2 and NCD have attracted considerable attention due to their unique electronic structure and extraordinary physical and chemical properties in many applications. In this study, the synthesis of MoS2 and H-NCD thin films using appropriate physical/chemical deposition methods and their analysis in terms of gas sensing properties in their individual and combined forms are demonstrated. The sensitivity and time domain characteristics of the sensors were investigated for three gases: NO2, NH3 and neutral synthetic air. It was observed that the heterostructure-based gas sensor exhibits improved sensitivity to oxidizing NO2 and reducing NH3 gases compared to pure active materials. Different gas interaction model pathways were developed to describe the current flow mechanism through the sensing area with/without heterostructure. The gas interaction model independently considers the influence of each material as well as the current flow mechanism through the formed P-N heterojunction.

Název v anglickém jazyce

Improved gas sensing capabilities of MoS2/diamond heterostructures at room temperature

Popis výsledku anglicky

MoS2 and NCD have attracted considerable attention due to their unique electronic structure and extraordinary physical and chemical properties in many applications. In this study, the synthesis of MoS2 and H-NCD thin films using appropriate physical/chemical deposition methods and their analysis in terms of gas sensing properties in their individual and combined forms are demonstrated. The sensitivity and time domain characteristics of the sensors were investigated for three gases: NO2, NH3 and neutral synthetic air. It was observed that the heterostructure-based gas sensor exhibits improved sensitivity to oxidizing NO2 and reducing NH3 gases compared to pure active materials. Different gas interaction model pathways were developed to describe the current flow mechanism through the sensing area with/without heterostructure. The gas interaction model independently considers the influence of each material as well as the current flow mechanism through the formed P-N heterojunction.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Materials and Interfaces

ISSN

1944-8244

e-ISSN

1944-8252

Svazek periodika

15

Číslo periodika v rámci svazku

28

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

33191-34322

Kód UT WoS článku

001021462400001

EID výsledku v databázi Scopus

2-s2.0-85164950155