Development of Nb-GaAs based superconductor-semiconductor hybrid platform by combining in situ dc magnetron sputtering and molecular beam epitaxy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00575229" target="_blank" >RIV/68378271:_____/23:00575229 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1103/PhysRevMaterials.7.076201" target="_blank" >https://doi.org/10.1103/PhysRevMaterials.7.076201</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevMaterials.7.076201" target="_blank" >10.1103/PhysRevMaterials.7.076201</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Development of Nb-GaAs based superconductor-semiconductor hybrid platform by combining in situ dc magnetron sputtering and molecular beam epitaxy

Popis výsledku v původním jazyce

We present Nb thin films deposited in situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultrahigh vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are compared. The results show clear variation between the in situ and ex situ deposition which we relate to differences in magnetron sputtering conditions and chamber geometry. The Nb films have critical temperatures of around 9 K and critical perpendicular magnetic fields of up to Bc2 = 1.4 T at 4.2 K. From STEM images of the GaAs-Nb interface we find the formation of an amorphous interlayer between the GaAs and the Nb for both the ex situ and in situ deposited material.

Název v anglickém jazyce

Development of Nb-GaAs based superconductor-semiconductor hybrid platform by combining in situ dc magnetron sputtering and molecular beam epitaxy

Popis výsledku anglicky

We present Nb thin films deposited in situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultrahigh vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are compared. The results show clear variation between the in situ and ex situ deposition which we relate to differences in magnetron sputtering conditions and chamber geometry. The Nb films have critical temperatures of around 9 K and critical perpendicular magnetic fields of up to Bc2 = 1.4 T at 4.2 K. From STEM images of the GaAs-Nb interface we find the formation of an amorphous interlayer between the GaAs and the Nb for both the ex situ and in situ deposited material.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review Materials

ISSN

2475-9953

e-ISSN

2475-9953

Svazek periodika

7

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

12

Strana od-do

076201

Kód UT WoS článku

001051430700001

EID výsledku v databázi Scopus

2-s2.0-85166979919