Near-infrared emitting of zero-dimensional europium(II) halide scintillators: energy transfer engineering via Sm2+ doping

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00577794" target="_blank" >RIV/68378271:_____/23:00577794 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21340/23:00367261 RIV/68407700:21460/23:00367261

Výsledek na webu

<a href="https://doi.org/10.1021/acsaelm.3c00534" target="_blank" >https://doi.org/10.1021/acsaelm.3c00534</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsaelm.3c00534" target="_blank" >10.1021/acsaelm.3c00534</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Near-infrared emitting of zero-dimensional europium(II) halide scintillators: energy transfer engineering via Sm2+ doping

Popis výsledku v původním jazyce

Near-infrared (NIR)-emitting scintillators, coupled with high quantum efficiency silicon-based photodetectors, have emerged as a promising solution for highly efficient radiation detection applications. In this work, we developed NIR-emitting zero-dimensional Cs4EuBr6 halide scintillators via Sm2+ doping. Single crystals of Cs4EuBr6 with varying Sm2+ concentrations were grown by the vertical Bridgman method. Under X-ray irradiation, the scintillation emission of highly Sm-doped Cs4EuBr6 single crystals is dominated by the Sm2+ 5d–4f emission peaking at 831 nm with a weak Eu2+ 5d–4f emission peaking at 443 nm. The energy transfer processes between Eu2+ and Sm2+ were investigated by using photoluminescence (PL) spectra, PL decay kinetics, and soft X-ray excited decay kinetics measurements. Furthermore, we evaluated the gamma spectroscopy response of Cs4EuBr6:Sm single crystals using an avalanche photodiode detector known for its high sensitivity in the NIR wavelength region.

Název v anglickém jazyce

Near-infrared emitting of zero-dimensional europium(II) halide scintillators: energy transfer engineering via Sm2+ doping

Popis výsledku anglicky

Near-infrared (NIR)-emitting scintillators, coupled with high quantum efficiency silicon-based photodetectors, have emerged as a promising solution for highly efficient radiation detection applications. In this work, we developed NIR-emitting zero-dimensional Cs4EuBr6 halide scintillators via Sm2+ doping. Single crystals of Cs4EuBr6 with varying Sm2+ concentrations were grown by the vertical Bridgman method. Under X-ray irradiation, the scintillation emission of highly Sm-doped Cs4EuBr6 single crystals is dominated by the Sm2+ 5d–4f emission peaking at 831 nm with a weak Eu2+ 5d–4f emission peaking at 443 nm. The energy transfer processes between Eu2+ and Sm2+ were investigated by using photoluminescence (PL) spectra, PL decay kinetics, and soft X-ray excited decay kinetics measurements. Furthermore, we evaluated the gamma spectroscopy response of Cs4EuBr6:Sm single crystals using an avalanche photodiode detector known for its high sensitivity in the NIR wavelength region.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/EF16_019%2F0000760" target="_blank" >EF16_019/0000760: Fyzika pevných látek pro 21. století</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Electronic Materials

ISSN

2637-6113

e-ISSN

2637-6113

Svazek periodika

5

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

3507-3514

Kód UT WoS článku

001011496900001

EID výsledku v databázi Scopus

2-s2.0-85163444067