Technological challenges in the fabrication of MoS2/diamond heterostructures

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00578045" target="_blank" >RIV/68378271:_____/23:00578045 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.confer.cz/nanocon/2022/4586-transition-metal-dichalcogenides-and-diamond-new-friends-for-promising-heterostructures" target="_blank" >https://www.confer.cz/nanocon/2022/4586-transition-metal-dichalcogenides-and-diamond-new-friends-for-promising-heterostructures</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.37904/nanocon.2022.4586" target="_blank" >10.37904/nanocon.2022.4586</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Technological challenges in the fabrication of MoS2/diamond heterostructures

Popis výsledku v původním jazyce

Nowadays, 2D materials are one of the most studied classes of materials. In addition to the most famous graphene, progress has been achieved in studying and using fundamental properties of transition metal dichalcogenides (TMD). Complementary, diamond as a representative of 3D materials has gained a reputation as an extremely versatile material due to its extraordinary combination of physical/chemical/electrical/optical properties. Besides these particular forms of 2D and 3D materials, their heterostructures have become very attractive due to new phenomena and functions (bandgap engineering, enhanced charge transport, optical interaction, etc.). However, individual technological procedures are still minimally investigated and described. Here, we will demonstrate a proof-of-concept for the preparation of MoS2/diamond heterostructures, where two different strategies were employed: a) growth of MoS2 layers on diamond films, and b) growth of diamond films on Si/MoS2 substrates.

Název v anglickém jazyce

Technological challenges in the fabrication of MoS2/diamond heterostructures

Popis výsledku anglicky

Nowadays, 2D materials are one of the most studied classes of materials. In addition to the most famous graphene, progress has been achieved in studying and using fundamental properties of transition metal dichalcogenides (TMD). Complementary, diamond as a representative of 3D materials has gained a reputation as an extremely versatile material due to its extraordinary combination of physical/chemical/electrical/optical properties. Besides these particular forms of 2D and 3D materials, their heterostructures have become very attractive due to new phenomena and functions (bandgap engineering, enhanced charge transport, optical interaction, etc.). However, individual technological procedures are still minimally investigated and described. Here, we will demonstrate a proof-of-concept for the preparation of MoS2/diamond heterostructures, where two different strategies were employed: a) growth of MoS2 layers on diamond films, and b) growth of diamond films on Si/MoS2 substrates.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

NANOCON 2022 Conference Proceedings

ISBN

978-80-88365-09-9

ISSN

2694-930X

e-ISSN

—

Počet stran výsledku

7

Strana od-do

21-27

Název nakladatele

Tanger Ltd.

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

19. 10. 2022

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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