Etching of polycrystalline diamond films via thermochemical process

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00599701" target="_blank" >RIV/68378271:_____/23:00599701 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Etching of polycrystalline diamond films via thermochemical process

Popis výsledku v původním jazyce

This study presents a novel approach to achieve controlled deep etching of diamond using nickel (Ni) as the catalyst in a thermochemical process conducted at different gas compositions and temperatures to 950 °C. Only minimal etching was observed under a Ni mask when the diamond was treated in hydrogen plasma. Introducing CO2 to the gas mixture enhanced the etching by 2-3 times. Unfortunately, the etching was also observed over the entire film area, including unmasked regions. Conversely, the use of water vapor demonstrated excellent etching selectivity, where the unmasked diamond area remained unaffected. This etching process was strongly pressure-dependent. In the low-pressure range (5 ÷ 50 Torr), catalytic etching achieved a maximum depth of 2-3 µm before slowing down due to the formation of a graphitized cap layer on the top surface, which limited the access of -OH to the diamond-Ni interface.

Název v anglickém jazyce

Etching of polycrystalline diamond films via thermochemical process

Popis výsledku anglicky

This study presents a novel approach to achieve controlled deep etching of diamond using nickel (Ni) as the catalyst in a thermochemical process conducted at different gas compositions and temperatures to 950 °C. Only minimal etching was observed under a Ni mask when the diamond was treated in hydrogen plasma. Introducing CO2 to the gas mixture enhanced the etching by 2-3 times. Unfortunately, the etching was also observed over the entire film area, including unmasked regions. Conversely, the use of water vapor demonstrated excellent etching selectivity, where the unmasked diamond area remained unaffected. This etching process was strongly pressure-dependent. In the low-pressure range (5 ÷ 50 Torr), catalytic etching achieved a maximum depth of 2-3 µm before slowing down due to the formation of a graphitized cap layer on the top surface, which limited the access of -OH to the diamond-Ni interface.

Druh

O - Ostatní výsledky

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

<a href="/cs/project/LUASK22147" target="_blank" >LUASK22147: Růstové a radiační mechanismy v diamantových hybridných detektorech</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů