Kelvin probe characterization of nanocrystalline diamond films with SiV centers as function of thickness

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00579808" target="_blank" >RIV/68378271:_____/24:00579808 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/24:00371752

Výsledek na webu

<a href="https://hdl.handle.net/11104/0353241" target="_blank" >https://hdl.handle.net/11104/0353241</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssa.202300459" target="_blank" >10.1002/pssa.202300459</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Kelvin probe characterization of nanocrystalline diamond films with SiV centers as function of thickness

Popis výsledku v původním jazyce

Optically active color centers in diamonds have been intensively studied due to their potential in photonics, energy harvesting, biosensing and quantum computing. SiV center offers an advantage of suitable emission wavelength and narrow zero-phonon line at room temperature. Measurement of surface potential and photovoltage can provide better understanding of the physics and control of SiV light emission, such as charge states and charging effects. Here we study optoelectronic properties of nanocrystalline diamond (NCD) films with SiV centers at different layer thicknesses (10-200 nm, controlled by the growth time) under ambient conditions. Time-dependent measurements are performed in the light-dark-light cycle. Positive photovoltage arises on samples with SiV layer thicknesses below 55 nm on both H-terminated and O-terminated surfaces. Above 55 nm the photovoltage switches to negative. This layer thickness thus represents a boundary between surface-controllable and bulk SiV centers.

Název v anglickém jazyce

Kelvin probe characterization of nanocrystalline diamond films with SiV centers as function of thickness

Popis výsledku anglicky

Optically active color centers in diamonds have been intensively studied due to their potential in photonics, energy harvesting, biosensing and quantum computing. SiV center offers an advantage of suitable emission wavelength and narrow zero-phonon line at room temperature. Measurement of surface potential and photovoltage can provide better understanding of the physics and control of SiV light emission, such as charge states and charging effects. Here we study optoelectronic properties of nanocrystalline diamond (NCD) films with SiV centers at different layer thicknesses (10-200 nm, controlled by the growth time) under ambient conditions. Time-dependent measurements are performed in the light-dark-light cycle. Positive photovoltage arises on samples with SiV layer thicknesses below 55 nm on both H-terminated and O-terminated surfaces. Above 55 nm the photovoltage switches to negative. This layer thickness thus represents a boundary between surface-controllable and bulk SiV centers.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Status Solidi A

ISSN

1862-6300

e-ISSN

1862-6319

Svazek periodika

221

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

2300459

Kód UT WoS článku

001091035100001

EID výsledku v databázi Scopus

2-s2.0-85174837907