Light emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00569728" target="_blank" >RIV/68378271:_____/23:00569728 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/23:10473206

Výsledek na webu

<a href="https://doi.org/10.1039/d2nr05470a" target="_blank" >https://doi.org/10.1039/d2nr05470a</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/d2nr05470a" target="_blank" >10.1039/d2nr05470a</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Light emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film

Popis výsledku v původním jazyce

Diamond thin films can be, at a relatively low-cost, prepared with a high-density of light-emitting negatively charged silicon vacancy (SiV) centers, which opens up the possibility of their application in photonics or sensing. The films are composed of diamond grains with both the SiV centers and sp2-carbon phase, the ratio of these two components being dependent on the preparation conditions. The grain surface and the sp2-related defects might act as traps for the carriers excited within the SiV centers, consequently decreasing their internal photoluminescence (PL) quantum efficiency. Here, we show that in a 300 nm thick polycrystalline diamond film on a quartz substrate, the SiV centers in the diamond grains possess similar temperature-dependent (13-300 K) PL decay dynamics as the SiV centers in monocrystalline diamond, which suggests that most of the SiV centers are not directly interconnected with the defects of the diamond thin films.

Název v anglickém jazyce

Light emission dynamics of silicon vacancy centers in a polycrystalline diamond thin film

Popis výsledku anglicky

Diamond thin films can be, at a relatively low-cost, prepared with a high-density of light-emitting negatively charged silicon vacancy (SiV) centers, which opens up the possibility of their application in photonics or sensing. The films are composed of diamond grains with both the SiV centers and sp2-carbon phase, the ratio of these two components being dependent on the preparation conditions. The grain surface and the sp2-related defects might act as traps for the carriers excited within the SiV centers, consequently decreasing their internal photoluminescence (PL) quantum efficiency. Here, we show that in a 300 nm thick polycrystalline diamond film on a quartz substrate, the SiV centers in the diamond grains possess similar temperature-dependent (13-300 K) PL decay dynamics as the SiV centers in monocrystalline diamond, which suggests that most of the SiV centers are not directly interconnected with the defects of the diamond thin films.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA19-14523S" target="_blank" >GA19-14523S: Stimulovaná emise a konkurenční procesy v optických centrech diamantu</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nanoscale

ISSN

2040-3364

e-ISSN

2040-3372

Svazek periodika

15

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

5

Strana od-do

2734-2738

Kód UT WoS článku

000915297800001

EID výsledku v databázi Scopus

2-s2.0-85146837540