Silicon-vacancy centers in ultra-thin nanocrystalline diamond films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00499763" target="_blank" >RIV/68378271:_____/18:00499763 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/18:00322436

Výsledek na webu

<a href="http://dx.doi.org/10.3390/mi9060281" target="_blank" >http://dx.doi.org/10.3390/mi9060281</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/mi9060281" target="_blank" >10.3390/mi9060281</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Silicon-vacancy centers in ultra-thin nanocrystalline diamond films

Popis výsledku v původním jazyce

Here we report the optoelectronic investigation of shallow silicon vacancy (SiV) color centers in ultra-thin (7–40 nm) nanocrystalline diamond (NCD) films. We show that hydrogenated ultra-thin NCD films exhibit no or lowered SiV photoluminescence (PL) and relatively high negative surface photovoltage (SPV) which is ascribed to non-radiative electron transitions from SiV to surface-related traps. Higher SiV PL and low positive SPV of oxidized ultra-thin NCD films indicate an efficient excitation—emission PL process without significant electron escape, yet with some hole trapping in diamond surface states. Decreasing SPV magnitude and increasing SiV PL intensity with thickness, in both cases, is attributed to resonant energy transfer between shallow and bulk SiV. We also demonstrate that thermal treatments (annealing in air or in hydrogen gas), are also applicable to ultra-thin NCD films in terms of tuning their SiV PL and surface chemistry.

Název v anglickém jazyce

Silicon-vacancy centers in ultra-thin nanocrystalline diamond films

Popis výsledku anglicky

Here we report the optoelectronic investigation of shallow silicon vacancy (SiV) color centers in ultra-thin (7–40 nm) nanocrystalline diamond (NCD) films. We show that hydrogenated ultra-thin NCD films exhibit no or lowered SiV photoluminescence (PL) and relatively high negative surface photovoltage (SPV) which is ascribed to non-radiative electron transitions from SiV to surface-related traps. Higher SiV PL and low positive SPV of oxidized ultra-thin NCD films indicate an efficient excitation—emission PL process without significant electron escape, yet with some hole trapping in diamond surface states. Decreasing SPV magnitude and increasing SiV PL intensity with thickness, in both cases, is attributed to resonant energy transfer between shallow and bulk SiV. We also demonstrate that thermal treatments (annealing in air or in hydrogen gas), are also applicable to ultra-thin NCD films in terms of tuning their SiV PL and surface chemistry.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Micromachines

ISSN

2072-666X

e-ISSN

—

Svazek periodika

9

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

11

Strana od-do

—

Kód UT WoS článku

000436506300027

EID výsledku v databázi Scopus

2-s2.0-85048420735