Strain-relaxed nanocrystalline diamond thin films with silicon vacancy centers using femtosecond laser irradiation for photonic applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00579802" target="_blank" >RIV/68378271:_____/23:00579802 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/23:10473233

Výsledek na webu

<a href="https://hdl.handle.net/11104/0348601" target="_blank" >https://hdl.handle.net/11104/0348601</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsanm.2c04976" target="_blank" >10.1021/acsanm.2c04976</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Strain-relaxed nanocrystalline diamond thin films with silicon vacancy centers using femtosecond laser irradiation for photonic applications

Popis výsledku v původním jazyce

Here we show that femtosecond (fs) laser pulses focused via a microscope objective on a nanocrystalline diamond thin film can be employed to reduce background photoluminescence intensity by a factor of 5 with respect to the luminescence of SiV centers. Raman spectra show that this decrease is mainly caused by laser ablation of the sp2-related carbon phase present in-between the grains. The reduction of the sp2 carbon phase also leads to a local decrease in the optical absorption followed by an almost twofold increase in the SiV emission peak intensity. Moreover, the fs-irradiation also entails the release of strain inside such a layer as manifested by the observed shift of the Raman diamond peak toward the value measured in the monocrystalline diamond and by a blue-shift of the zero-phonon-line peak position of the SiV centers. Such a finding might enable the improvement of the optical quality of the nanocrystalline diamond-based photonic nanostructures.

Název v anglickém jazyce

Strain-relaxed nanocrystalline diamond thin films with silicon vacancy centers using femtosecond laser irradiation for photonic applications

Popis výsledku anglicky

Here we show that femtosecond (fs) laser pulses focused via a microscope objective on a nanocrystalline diamond thin film can be employed to reduce background photoluminescence intensity by a factor of 5 with respect to the luminescence of SiV centers. Raman spectra show that this decrease is mainly caused by laser ablation of the sp2-related carbon phase present in-between the grains. The reduction of the sp2 carbon phase also leads to a local decrease in the optical absorption followed by an almost twofold increase in the SiV emission peak intensity. Moreover, the fs-irradiation also entails the release of strain inside such a layer as manifested by the observed shift of the Raman diamond peak toward the value measured in the monocrystalline diamond and by a blue-shift of the zero-phonon-line peak position of the SiV centers. Such a finding might enable the improvement of the optical quality of the nanocrystalline diamond-based photonic nanostructures.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA19-14523S" target="_blank" >GA19-14523S: Stimulovaná emise a konkurenční procesy v optických centrech diamantu</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Nano Materials

ISSN

2574-0970

e-ISSN

—

Svazek periodika

6

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

3268-3276

Kód UT WoS článku

000937159400001

EID výsledku v databázi Scopus

2-s2.0-85148996353