Dual-wavelength femtosecond laser-induced low-fluence single-shot damage and ablation of silicon

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00587560" target="_blank" >RIV/68378271:_____/24:00587560 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.spiedigitallibrary.org/conference-proceedings-of-spie/12939/129390F/Dual-wavelength-femtosecond-laser-induced-low-fluence-single-shot-damage/10.1117/12.3012585.short" target="_blank" >https://www.spiedigitallibrary.org/conference-proceedings-of-spie/12939/129390F/Dual-wavelength-femtosecond-laser-induced-low-fluence-single-shot-damage/10.1117/12.3012585.short</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.3012585" target="_blank" >10.1117/12.3012585</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Dual-wavelength femtosecond laser-induced low-fluence single-shot damage and ablation of silicon

Popis výsledku v původním jazyce

A study of damage and ablation of silicon induced by two individual femtosecond laser pulses of different wavelengths, 1030 and 515 nm, is performed to address the physical mechanisms of dual-wavelength ablation and reveal possibilities for increasing the ablation efficiency. The produced ablation craters and damaged areas are analyzed as a function of time separation between the pulses and are compared with monochromatic pulses of the same total energy. Particular attention is given to low-fluence irradiation regimes when the energy densities in each pulse are below the ablation threshold and thus no shielding of the subsequent pulse by the ablation products occurs. The sequence order of pulses is demonstrated to be essential in bi-color ablation with higher material removal rates when a shorter-wavelength pulse arrives first at the surface. At long delays of 30-100 ps, the dual-wavelength ablation is found to be particularly strong with the formation of deep smooth craters. This is explained by the expansion of a hot liquid layer produced by the first pulse with a drastic decrease in the surface reflectivity at this timescale. The results provide insight into the processes of dual-wavelength laser ablation offering a better control of the energy deposition into material.

Název v anglickém jazyce

Dual-wavelength femtosecond laser-induced low-fluence single-shot damage and ablation of silicon

Popis výsledku anglicky

A study of damage and ablation of silicon induced by two individual femtosecond laser pulses of different wavelengths, 1030 and 515 nm, is performed to address the physical mechanisms of dual-wavelength ablation and reveal possibilities for increasing the ablation efficiency. The produced ablation craters and damaged areas are analyzed as a function of time separation between the pulses and are compared with monochromatic pulses of the same total energy. Particular attention is given to low-fluence irradiation regimes when the energy densities in each pulse are below the ablation threshold and thus no shielding of the subsequent pulse by the ablation products occurs. The sequence order of pulses is demonstrated to be essential in bi-color ablation with higher material removal rates when a shorter-wavelength pulse arrives first at the surface. At long delays of 30-100 ps, the dual-wavelength ablation is found to be particularly strong with the formation of deep smooth craters. This is explained by the expansion of a hot liquid layer produced by the first pulse with a drastic decrease in the surface reflectivity at this timescale. The results provide insight into the processes of dual-wavelength laser ablation offering a better control of the energy deposition into material.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/EH22_008%2F0004596" target="_blank" >EH22_008/0004596: Senzory a detektory pro informační společnost budoucnosti</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of SPIE - The International Society for Optical Engineering

ISBN

978-151067184-3

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

8

Strana od-do

129390F

Název nakladatele

SPIE

Místo vydání

Bellingham

Místo konání akce

Santa Fe

Datum konání akce

26. 2. 2024

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

001260005400014