Vertically aligned boron-doped diamond nanostructures as highly efficient electrodes for electrochemical supercapacitors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00597813" target="_blank" >RIV/68378271:_____/24:00597813 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1039/D3TA07728D" target="_blank" >https://doi.org/10.1039/D3TA07728D</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/D3TA07728D" target="_blank" >10.1039/D3TA07728D</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Vertically aligned boron-doped diamond nanostructures as highly efficient electrodes for electrochemical supercapacitors

Popis výsledku v původním jazyce

Nanostructured boron-doped diamond (BDD) offers a sizeable ion-accessible area, high mechanical robustness, and high electrical conductivity, and could be a suitable electrode for high-performance electrochemical (EC) supercapacitors. Herein, two morphological BDD films, namely, boron-doped microcrystalline diamond (BMCD) and boron-doped ultra-nanocrystalline diamond (BUNCD), are employed for nanostructuring. The diamond nanopillars are fabricated via the Au mask-assisted reactive ion etching (RIE) method. The nanostructured samples of BMCD and BUNCD are termed BMCDN and BUNCDN. The Raman spectroscopy and X-ray photoelectron spectroscopy measurements of these nanostructured samples confirm the presence of sp2 in sp3-bonded carbon, which combine to offer good EC activity of sp2 and exceptional stability of sp3 carbon. These nanostructured BDD samples with enhanced surface area are utilized as electrode materials to construct an electric double-layer capacitor and pseudocapacitor. In 1 M Na2SO4 solution, the maximum specific capacitance of BMCDN is found to be 0.0852 mF cm−2, whereas, for BUNCDN the value is 0.0784 mF cm−2. The electrochemical analysis of these samples shows they exhibit superior electron transfer kinetics with 80% capacitance retention after 2000 cycles, which indicates the suitable utilization of these nanostructured samples as electrodes in EC supercapacitors.

Název v anglickém jazyce

Vertically aligned boron-doped diamond nanostructures as highly efficient electrodes for electrochemical supercapacitors

Popis výsledku anglicky

Nanostructured boron-doped diamond (BDD) offers a sizeable ion-accessible area, high mechanical robustness, and high electrical conductivity, and could be a suitable electrode for high-performance electrochemical (EC) supercapacitors. Herein, two morphological BDD films, namely, boron-doped microcrystalline diamond (BMCD) and boron-doped ultra-nanocrystalline diamond (BUNCD), are employed for nanostructuring. The diamond nanopillars are fabricated via the Au mask-assisted reactive ion etching (RIE) method. The nanostructured samples of BMCD and BUNCD are termed BMCDN and BUNCDN. The Raman spectroscopy and X-ray photoelectron spectroscopy measurements of these nanostructured samples confirm the presence of sp2 in sp3-bonded carbon, which combine to offer good EC activity of sp2 and exceptional stability of sp3 carbon. These nanostructured BDD samples with enhanced surface area are utilized as electrode materials to construct an electric double-layer capacitor and pseudocapacitor. In 1 M Na2SO4 solution, the maximum specific capacitance of BMCDN is found to be 0.0852 mF cm−2, whereas, for BUNCDN the value is 0.0784 mF cm−2. The electrochemical analysis of these samples shows they exhibit superior electron transfer kinetics with 80% capacitance retention after 2000 cycles, which indicates the suitable utilization of these nanostructured samples as electrodes in EC supercapacitors.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Materials Chemistry A

ISSN

2050-7488

e-ISSN

2050-7496

Svazek periodika

12

Číslo periodika v rámci svazku

32

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

14

Strana od-do

21134-21147

Kód UT WoS článku

001266180700001

EID výsledku v databázi Scopus

2-s2.0-85198948534