Plasma electron characterization in electron chemical vapor deposition

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00599249" target="_blank" >RIV/68378271:_____/24:00599249 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0356800" target="_blank" >https://hdl.handle.net/11104/0356800</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1116/6.0003408" target="_blank" >10.1116/6.0003408</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Plasma electron characterization in electron chemical vapor deposition

Popis výsledku v původním jazyce

Recently, a novel approach of depositing metallic films with chemical vapor deposition (CVD), using plasma electrons as reducing agents, has been presented and is herein referred to as e-CVD. By applying a positive substrate bias to the substrate holder, plasma electrons are drawn to the surface of the substrate, where the film growth occurs. In this work, we have characterized the electron flux at the substrate position in terms of energy and number density as well as the plasma potential and floating potential when maintaining an unbiased and a positively biased substrate. The measurements were performed using a modified radio frequency Sobolewski probe to overcome issues due to the coating of conventional electrostatic probes. The plasma was generated using a DC hollow cathode plasma discharge at various discharge powers and operated with and without precursor gas. With a precursor, an increase in the substrate bias shows a trend of increasing electron density. The electron temperature does not change much without precursor gas and is found in the range of 0.3–1.1 eV. Introducing a precursor gas to the vacuum chamber shows an increase in the electron temperature to a range of 1–5 eV and with a trend of decreasing electron temperature as a function of discharge power. From the values of the plasma potential and the substrate bias potential, we were able to calculate the potential difference between the plasma and the substrate, giving us insight into what charge carriers are expected at the substrate under different process conditions.

Název v anglickém jazyce

Plasma electron characterization in electron chemical vapor deposition

Popis výsledku anglicky

Recently, a novel approach of depositing metallic films with chemical vapor deposition (CVD), using plasma electrons as reducing agents, has been presented and is herein referred to as e-CVD. By applying a positive substrate bias to the substrate holder, plasma electrons are drawn to the surface of the substrate, where the film growth occurs. In this work, we have characterized the electron flux at the substrate position in terms of energy and number density as well as the plasma potential and floating potential when maintaining an unbiased and a positively biased substrate. The measurements were performed using a modified radio frequency Sobolewski probe to overcome issues due to the coating of conventional electrostatic probes. The plasma was generated using a DC hollow cathode plasma discharge at various discharge powers and operated with and without precursor gas. With a precursor, an increase in the substrate bias shows a trend of increasing electron density. The electron temperature does not change much without precursor gas and is found in the range of 0.3–1.1 eV. Introducing a precursor gas to the vacuum chamber shows an increase in the electron temperature to a range of 1–5 eV and with a trend of decreasing electron temperature as a function of discharge power. From the values of the plasma potential and the substrate bias potential, we were able to calculate the potential difference between the plasma and the substrate, giving us insight into what charge carriers are expected at the substrate under different process conditions.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Vacuum Science & Technology A : Vacuum, Surfaces and Films

ISSN

0734-2101

e-ISSN

1520-8559

Svazek periodika

42

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

023006

Kód UT WoS článku

001173755300004

EID výsledku v databázi Scopus

2-s2.0-85186108785