Investigation of RF and DC plasma - jet system during deposition of highly oriented ZnO Films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60076658%3A12410%2F03%3A00004555" target="_blank" >RIV/60076658:12410/03:00004555 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of RF and DC plasma - jet system during deposition of highly oriented ZnO Films

Popis výsledku v původním jazyce

RF and DC plasma jet sputtering systems were investigated as a source for deposition of ZnO thin films. Deposited ZnO films have a strong orientation of hexagonal crystallities with 'c' axis perpendicular to the substrate surface. Temperature of the substrate did not exceed 150oC during the deposition. Langmuir probe measurement performed at the substrate revealed two group of electrons with approximate maxwellian distribution in the DC plasma jet and one maxwellian group in the case of RF plasma jet system. Electron concentration in the RF jet was about 5 109 - 1010 cm-3 with electron temperature 2.5 -3.5 eV. Concentration of cold electrons in the DC jet was usually 109 cm-3 with temperature 0.5 eV and hot electrons 108 cm-3 with temperature 2-3.5 eV.Photography also confirmed that plasma density is higher in the position of the substrate in the RF jet than in the DC jet. Other obtained macroscopic parameters as plasma potential, floating potential and DC voltage of the Zn nozzle rel

Název v anglickém jazyce

Investigation of RF and DC plasma - jet system during deposition of highly oriented ZnO Films

Popis výsledku anglicky

RF and DC plasma jet sputtering systems were investigated as a source for deposition of ZnO thin films. Deposited ZnO films have a strong orientation of hexagonal crystallities with 'c' axis perpendicular to the substrate surface. Temperature of the substrate did not exceed 150oC during the deposition. Langmuir probe measurement performed at the substrate revealed two group of electrons with approximate maxwellian distribution in the DC plasma jet and one maxwellian group in the case of RF plasma jet system. Electron concentration in the RF jet was about 5 109 - 1010 cm-3 with electron temperature 2.5 -3.5 eV. Concentration of cold electrons in the DC jet was usually 109 cm-3 with temperature 0.5 eV and hot electrons 108 cm-3 with temperature 2-3.5 eV.Photography also confirmed that plasma density is higher in the position of the substrate in the RF jet than in the DC jet. Other obtained macroscopic parameters as plasma potential, floating potential and DC voltage of the Zn nozzle rel

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2003

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

In: Surface and Coatings Technology

ISSN

0257-8972

e-ISSN

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Svazek periodika

2003

Číslo periodika v rámci svazku

174-175

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

627-631

Kód UT WoS článku

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EID výsledku v databázi Scopus

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