Influence of SnBi antisite defects on the electronic band structure and transport properties of the layered chalcogenide semiconductor SnBi2Te4

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00601629" target="_blank" >RIV/68378271:_____/24:00601629 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1021/acs.jpcc.4c06097" target="_blank" >https://doi.org/10.1021/acs.jpcc.4c06097</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.jpcc.4c06097" target="_blank" >10.1021/acs.jpcc.4c06097</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of SnBi antisite defects on the electronic band structure and transport properties of the layered chalcogenide semiconductor SnBi2Te4

Popis výsledku v původním jazyce

Narrow-band gap, layered chalcogenide semiconductors provide a rich area of research for designing highly efficient thermoelectric materials for near-room-temperature applications due to their intrinsically low lattice thermal conductivity and multivalley electronic band structure. Here, we report on a comprehensive theoretical and experimental investigation of the thermoelectric properties of one member of this class, SnBi2Te4, in the temperature range of 5–700 K. Transport property measurements combined with electronic band structure calculations show that SnBi2Te4 is a p-type, narrow-band gap semiconductor with a multivalley valence band structure. The complex crystal structure of SnBi2Te4 contributes to the very low lattice thermal conductivity of the order of 0.5 W m–1 K–1 at 300 K, leading to peak ZT values of 0.32 at 350 and 400 K for Sn0.95Bi2Te4 and SnBi2Te4, respectively.

Název v anglickém jazyce

Influence of SnBi antisite defects on the electronic band structure and transport properties of the layered chalcogenide semiconductor SnBi2Te4

Popis výsledku anglicky

Narrow-band gap, layered chalcogenide semiconductors provide a rich area of research for designing highly efficient thermoelectric materials for near-room-temperature applications due to their intrinsically low lattice thermal conductivity and multivalley electronic band structure. Here, we report on a comprehensive theoretical and experimental investigation of the thermoelectric properties of one member of this class, SnBi2Te4, in the temperature range of 5–700 K. Transport property measurements combined with electronic band structure calculations show that SnBi2Te4 is a p-type, narrow-band gap semiconductor with a multivalley valence band structure. The complex crystal structure of SnBi2Te4 contributes to the very low lattice thermal conductivity of the order of 0.5 W m–1 K–1 at 300 K, leading to peak ZT values of 0.32 at 350 and 400 K for Sn0.95Bi2Te4 and SnBi2Te4, respectively.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry C

ISSN

1932-7447

e-ISSN

1932-7455

Svazek periodika

128

Číslo periodika v rámci svazku

44

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

17

Strana od-do

18976-18992

Kód UT WoS článku

001343802300001

EID výsledku v databázi Scopus

2-s2.0-85207440101