AsTe3: A novel crystalline semiconductor with ultralow thermal conductivity obtained by congruent crystallization from parent glass

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F24%3A00377727" target="_blank" >RIV/68407700:21340/24:00377727 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.jallcom.2024.175918" target="_blank" >https://doi.org/10.1016/j.jallcom.2024.175918</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jallcom.2024.175918" target="_blank" >10.1016/j.jallcom.2024.175918</a>

Jazyk výsledku

angličtina

Název v původním jazyce

AsTe3: A novel crystalline semiconductor with ultralow thermal conductivity obtained by congruent crystallization from parent glass

Popis výsledku v původním jazyce

The synthesis of novel narrow-band-gap semiconductors with ultralow thermal conductivity opens a pathway to the design of functional materials with high thermoelectric performance or with interesting optical sensitivity in the infrared range. Here, we report on the discovery of the novel crystalline binary AsTe3 (c-AsTe3) prepared by spark plasma sintering (SPS) from full and congruent crystallization of amorphous AsTe3 (a-AsTe3) previously prepared by twin roller quenching. X-ray diffraction suggests that the structure of c-AsTe3 can be described as a superstructure of elementary Te with a specific distribution of As and Te atoms. More specifically, it appears as an intergrowth of a Te subunit (3 atoms) and As2Te5 subunit (6 As + 15 Te atoms) separated with interlayer spaces. The optical transmittance measured on both crystalline and amorphous AsTe3 indicates a maximum transmittance of 22 % over the infrared range 10-25 mu m. Transport properties measurements, performed between 5 and 375 K, reveal that AsTe3 behaves as a lightly doped, p-type semiconductor. The complex crystal structure combined with a small-grain-size microstructure of the sample yields extremely low lattice thermal conductivity values of 0.35 W m(-1) K-1 near 300 K. This poor ability to conduct heat is the main property that gives rise to an estimated dimensionless thermoelectric figure of merit ZT of similar to 0.3 at 375 K. These findings show that the recrystallization of amorphous phases by SPS provides an effective approach for stabilizing novel phases with interesting functional properties.

Název v anglickém jazyce

AsTe3: A novel crystalline semiconductor with ultralow thermal conductivity obtained by congruent crystallization from parent glass

Popis výsledku anglicky

The synthesis of novel narrow-band-gap semiconductors with ultralow thermal conductivity opens a pathway to the design of functional materials with high thermoelectric performance or with interesting optical sensitivity in the infrared range. Here, we report on the discovery of the novel crystalline binary AsTe3 (c-AsTe3) prepared by spark plasma sintering (SPS) from full and congruent crystallization of amorphous AsTe3 (a-AsTe3) previously prepared by twin roller quenching. X-ray diffraction suggests that the structure of c-AsTe3 can be described as a superstructure of elementary Te with a specific distribution of As and Te atoms. More specifically, it appears as an intergrowth of a Te subunit (3 atoms) and As2Te5 subunit (6 As + 15 Te atoms) separated with interlayer spaces. The optical transmittance measured on both crystalline and amorphous AsTe3 indicates a maximum transmittance of 22 % over the infrared range 10-25 mu m. Transport properties measurements, performed between 5 and 375 K, reveal that AsTe3 behaves as a lightly doped, p-type semiconductor. The complex crystal structure combined with a small-grain-size microstructure of the sample yields extremely low lattice thermal conductivity values of 0.35 W m(-1) K-1 near 300 K. This poor ability to conduct heat is the main property that gives rise to an estimated dimensionless thermoelectric figure of merit ZT of similar to 0.3 at 375 K. These findings show that the recrystallization of amorphous phases by SPS provides an effective approach for stabilizing novel phases with interesting functional properties.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Alloys and Compounds

ISSN

0925-8388

e-ISSN

1873-4669

Svazek periodika

1004

Číslo periodika v rámci svazku

175918

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

12

Strana od-do

—

Kód UT WoS článku

001302007900001

EID výsledku v databázi Scopus

2-s2.0-85201108457