Controlling defect chemistry in InTe by saturation annealing

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00565306" target="_blank" >RIV/68378271:_____/22:00565306 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1021/acsaem.2c02364" target="_blank" >https://doi.org/10.1021/acsaem.2c02364</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsaem.2c02364" target="_blank" >10.1021/acsaem.2c02364</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Controlling defect chemistry in InTe by saturation annealing

Popis výsledku v původním jazyce

Achieving a precise control of defects in chalcogenide semiconductors is paramount to optimizing their thermoelectric properties. Recently, p-type InTe has emerged as a potential candidate for thermoelectric applications in power generation, mainly due to its extremely low lattice thermal conductivity. Here, we show that the concentration of inherent In vacancies in both single-crystalline and polycrystalline InTe samples can be successfully controlled through saturation annealing. This process, performed on both the In-rich and Te-rich sides of the solidus line at 943, 893, 843, and 943 K, respectively, results in variations in the hole concentration from 4.9 to 8.5 × 1019 cm-3 at 300 K. This narrow density range suggests that the defect chemistry in InTe plays a less critical role in determining its thermoelectric properties compared to other state-of-the-art thermoelectric chalcogenides.

Název v anglickém jazyce

Controlling defect chemistry in InTe by saturation annealing

Popis výsledku anglicky

Achieving a precise control of defects in chalcogenide semiconductors is paramount to optimizing their thermoelectric properties. Recently, p-type InTe has emerged as a potential candidate for thermoelectric applications in power generation, mainly due to its extremely low lattice thermal conductivity. Here, we show that the concentration of inherent In vacancies in both single-crystalline and polycrystalline InTe samples can be successfully controlled through saturation annealing. This process, performed on both the In-rich and Te-rich sides of the solidus line at 943, 893, 843, and 943 K, respectively, results in variations in the hole concentration from 4.9 to 8.5 × 1019 cm-3 at 300 K. This narrow density range suggests that the defect chemistry in InTe plays a less critical role in determining its thermoelectric properties compared to other state-of-the-art thermoelectric chalcogenides.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Energy Materials

ISSN

2574-0962

e-ISSN

—

Svazek periodika

5

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

13714-13722

Kód UT WoS článku

000883759300001

EID výsledku v databázi Scopus

2-s2.0-85141706023