Evolution of defects, morphology, and strain during FAMAPbI3 perovskite vacuum deposition: insights from in situ photoluminescence and X-ray scattering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00603806" target="_blank" >RIV/68378271:_____/24:00603806 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1021/acsami.4c04095" target="_blank" >https://doi.org/10.1021/acsami.4c04095</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsami.4c04095" target="_blank" >10.1021/acsami.4c04095</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Evolution of defects, morphology, and strain during FAMAPbI3 perovskite vacuum deposition: insights from in situ photoluminescence and X-ray scattering

Popis výsledku v původním jazyce

At present, the power conversion efficiency of single-junction perovskite-based solar cells reaches over 26%. The further efficiency increase of perovskite-based optoelectronic devices is limited mainly by defects, causing the nonradiative recombination of charge carriers. To improve efficiency and ensure reproducible fabrication of high-quality layers, it is crucial to understand the perovskite nucleation and growth mechanism along with associated process control to reduce the defect density. In this study, we investigate the growth kinetics of a promising narrow bandgap perovskite, formamidinium methylammonium lead iodide (FAMAPbI(3)), for high-performance single-junction solar cells. The temporal evolution of structural and optoelectronic properties during FAMAPbI(3) vacuum codeposition was inspected in real time by grazing-incidence wide-angle X-ray scattering and photoluminescence. Such a combination of analytical techniques unravels the evolution of intrinsic defect density and layer morphology correlated with lattice strain from the early stages of the perovskite deposition.

Název v anglickém jazyce

Evolution of defects, morphology, and strain during FAMAPbI3 perovskite vacuum deposition: insights from in situ photoluminescence and X-ray scattering

Popis výsledku anglicky

At present, the power conversion efficiency of single-junction perovskite-based solar cells reaches over 26%. The further efficiency increase of perovskite-based optoelectronic devices is limited mainly by defects, causing the nonradiative recombination of charge carriers. To improve efficiency and ensure reproducible fabrication of high-quality layers, it is crucial to understand the perovskite nucleation and growth mechanism along with associated process control to reduce the defect density. In this study, we investigate the growth kinetics of a promising narrow bandgap perovskite, formamidinium methylammonium lead iodide (FAMAPbI(3)), for high-performance single-junction solar cells. The temporal evolution of structural and optoelectronic properties during FAMAPbI(3) vacuum codeposition was inspected in real time by grazing-incidence wide-angle X-ray scattering and photoluminescence. Such a combination of analytical techniques unravels the evolution of intrinsic defect density and layer morphology correlated with lattice strain from the early stages of the perovskite deposition.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Materials and Interfaces

ISSN

1944-8244

e-ISSN

1944-8252

Svazek periodika

16

Číslo periodika v rámci svazku

27

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

35723-35731

Kód UT WoS článku

001258207200001

EID výsledku v databázi Scopus

2-s2.0-85197577033