High-temperature threshold of damage of SiC by swift heavy ions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00617441" target="_blank" >RIV/68378271:_____/25:00617441 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389021:_____/25:00647867

Výsledek na webu

<a href="https://doi.org/10.1016/j.jallcom.2025.178524" target="_blank" >https://doi.org/10.1016/j.jallcom.2025.178524</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jallcom.2025.178524" target="_blank" >10.1016/j.jallcom.2025.178524</a>

Jazyk výsledku

angličtina

Název v původním jazyce

High-temperature threshold of damage of SiC by swift heavy ions

Popis výsledku v původním jazyce

At ambient conditions, SiC is resistant to irradiation with swift heavy ions (SHI) decelerating in the electronic stopping regime. However, there is no experimental data on the SiC irradiation at elevated temperatures. To investigate this problem, we evaluate the stability of SiC to SHI impacts at high temperatures up to 2200 K. We combine a transport Monte-Carlo simulation, describing excitation of the electronic and atomic systems using temperature-dependent scattering cross-sections, with molecular-dynamic modeling of the lattice response to the excitation. We demonstrate that increasing irradiation temperature increases the energy transferred to the atomic lattice from the excited electronic system. This material heating leads to the formation of a stable nanometric damaged core along the trajectory of 710 MeV Bi ion when the irradiation temperature overcomes the threshold of ~1800 K. In this case, a chain of nanometric voids forms along the ion trajectory due to the mass transport from the track core by edge dislocations. Voids of larger sizes appear at higher irradiation temperatures. At lower irradiation temperatures, the damaged regions recrystallize completely within ~100 ps after the ion passage.

Název v anglickém jazyce

High-temperature threshold of damage of SiC by swift heavy ions

Popis výsledku anglicky

At ambient conditions, SiC is resistant to irradiation with swift heavy ions (SHI) decelerating in the electronic stopping regime. However, there is no experimental data on the SiC irradiation at elevated temperatures. To investigate this problem, we evaluate the stability of SiC to SHI impacts at high temperatures up to 2200 K. We combine a transport Monte-Carlo simulation, describing excitation of the electronic and atomic systems using temperature-dependent scattering cross-sections, with molecular-dynamic modeling of the lattice response to the excitation. We demonstrate that increasing irradiation temperature increases the energy transferred to the atomic lattice from the excited electronic system. This material heating leads to the formation of a stable nanometric damaged core along the trajectory of 710 MeV Bi ion when the irradiation temperature overcomes the threshold of ~1800 K. In this case, a chain of nanometric voids forms along the ion trajectory due to the mass transport from the track core by edge dislocations. Voids of larger sizes appear at higher irradiation temperatures. At lower irradiation temperatures, the damaged regions recrystallize completely within ~100 ps after the ion passage.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

<a href="/cs/project/LM2023068" target="_blank" >LM2023068: Prague Asterix Laser System</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Alloys and Compounds

ISSN

0925-8388

e-ISSN

1873-4669

Svazek periodika

1013

Číslo periodika v rámci svazku

Jan

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

16

Strana od-do

178524

Kód UT WoS článku

001423274700001

EID výsledku v databázi Scopus

2-s2.0-85214929865