Impedance spectroscopy of doped ZnO thin films deposited by PLD

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00639575" target="_blank" >RIV/68378271:_____/25:00639575 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Impedance spectroscopy of doped ZnO thin films deposited by PLD

Popis výsledku v původním jazyce

In this study, we focused on exploring the impact of dopants on ZnO thin films grown by Pulsed Laser Deposition (PLD) on sapphire substrates for potential photodetector applications. Photothermal deflection spectroscopy (PDS) was used to investigate sub-bandgap absorption features and Urbach energy, shedding light on the density of states and structural disorder within the films. Furthermore, photoluminescence (PL) analysis supported the PDS results by showing variations in emission characteristics related to Indium doping. Impedance spectroscopy was then utilized to delve into the electrical behavior of the ZnO films, employing equivalent circuit models to extract crucial parameters like carrier concentration and mobility. Our findings revealed notable changes in optical properties with varying Indium concentration, suggesting a shift in electronic structure and defect states. This integrated approach provided a thorough understanding of the optoelectronic features of ZnO films, indicating that optimized Indium doping could improve photoresponse and charge transport, positioning ZnO as a promising material for advanced photodetector technologies.

Název v anglickém jazyce

Impedance spectroscopy of doped ZnO thin films deposited by PLD

Popis výsledku anglicky

In this study, we focused on exploring the impact of dopants on ZnO thin films grown by Pulsed Laser Deposition (PLD) on sapphire substrates for potential photodetector applications. Photothermal deflection spectroscopy (PDS) was used to investigate sub-bandgap absorption features and Urbach energy, shedding light on the density of states and structural disorder within the films. Furthermore, photoluminescence (PL) analysis supported the PDS results by showing variations in emission characteristics related to Indium doping. Impedance spectroscopy was then utilized to delve into the electrical behavior of the ZnO films, employing equivalent circuit models to extract crucial parameters like carrier concentration and mobility. Our findings revealed notable changes in optical properties with varying Indium concentration, suggesting a shift in electronic structure and defect states. This integrated approach provided a thorough understanding of the optoelectronic features of ZnO films, indicating that optimized Indium doping could improve photoresponse and charge transport, positioning ZnO as a promising material for advanced photodetector technologies.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů