Optical and impedance spectroscopy of undoped and In, Ga and Al doped ZnO thin films deposited by pulsed laser deposition on sapphire substrates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00638165" target="_blank" >RIV/68378271:_____/24:00638165 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Optical and impedance spectroscopy of undoped and In, Ga and Al doped ZnO thin films deposited by pulsed laser deposition on sapphire substrates

Popis výsledku v původním jazyce

In this work, the nominally undoped and In, Ga and Al-doped ZnO thin films were pulsed laser deposited (PLD) on sapphire substrates and tested for potential applications in photodetector devices. Impedance spectroscopy was employed to investigate the electrical properties and charge transport mechanisms in the ZnO films. The IS data were analyzed using equivalent circuit models to extract key parameters such as carrier concentration, mobility, and interfacial resistance. The results demonstrated the impact of Indium doping on the electrical characteristics of the ZnO host material. The combined analysis provided a comprehensive understanding of the optoelectronic properties of znO films. The findings suggest that optimized Indium doping can enhance the photoresponse and charge transport properties of ZnO, making ZnO a promising material for high-performance photodetector applications. This study highlights the potential of ZnO in developing next-generation optoelectronic devices with improved sensitivity and response times.

Název v anglickém jazyce

Optical and impedance spectroscopy of undoped and In, Ga and Al doped ZnO thin films deposited by pulsed laser deposition on sapphire substrates

Popis výsledku anglicky

In this work, the nominally undoped and In, Ga and Al-doped ZnO thin films were pulsed laser deposited (PLD) on sapphire substrates and tested for potential applications in photodetector devices. Impedance spectroscopy was employed to investigate the electrical properties and charge transport mechanisms in the ZnO films. The IS data were analyzed using equivalent circuit models to extract key parameters such as carrier concentration, mobility, and interfacial resistance. The results demonstrated the impact of Indium doping on the electrical characteristics of the ZnO host material. The combined analysis provided a comprehensive understanding of the optoelectronic properties of znO films. The findings suggest that optimized Indium doping can enhance the photoresponse and charge transport properties of ZnO, making ZnO a promising material for high-performance photodetector applications. This study highlights the potential of ZnO in developing next-generation optoelectronic devices with improved sensitivity and response times.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů