Optical, electrical and surface properties of bare and Al-doped nanocrystalline ZnO (AZO) thin films grown by pulsed laser deposition (PLD) on commercial interdigital electrodes (IDE)
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00641372" target="_blank" >RIV/68378271:_____/25:00641372 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/68407700:21230/25:00385948
Výsledek na webu
<a href="https://hdl.handle.net/11104/0372152" target="_blank" >https://hdl.handle.net/11104/0372152</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1402-4896/ae1897" target="_blank" >10.1088/1402-4896/ae1897</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Optical, electrical and surface properties of bare and Al-doped nanocrystalline ZnO (AZO) thin films grown by pulsed laser deposition (PLD) on commercial interdigital electrodes (IDE)
Popis výsledku v původním jazyce
Zinc oxide (ZnO) is a low-cost, environmentally friendly material with unique optical properties and a wide variety of nano- and microstructures, making it attractive for applications in energy conversion, scintillators, photocatalytic wastewater treatment, electrochemical energy storage, and sensing. In this work, nominally undoped and Al-doped nanocrystalline ZnO (AZO) thin films were deposited by pulsed laser deposition (PLD) on commercial gold-based interdigitated electrodes (IDE) on glass substrates. Surface morphology and structure were characterized using Correlative Probe and Electron Microscopy (CPEM), combining Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) to perform spatially correlated measurements. Longer deposition resulted in the growth of larger crystals and thicker ZnO layers, while Al doping only slightly affected grain size and reduced growth rate. Optical and optoelectronic properties were investigated by photothermal deflection (PDS) and photocurrent spectroscopy (PCS). The mobility edge was found to lie approximately 0.3 eV below the band gap. Space-charge-limited currents were observed at low voltages. Persistent photoconductivity indicates potential issues with charge transport.n
Název v anglickém jazyce
Optical, electrical and surface properties of bare and Al-doped nanocrystalline ZnO (AZO) thin films grown by pulsed laser deposition (PLD) on commercial interdigital electrodes (IDE)
Popis výsledku anglicky
Zinc oxide (ZnO) is a low-cost, environmentally friendly material with unique optical properties and a wide variety of nano- and microstructures, making it attractive for applications in energy conversion, scintillators, photocatalytic wastewater treatment, electrochemical energy storage, and sensing. In this work, nominally undoped and Al-doped nanocrystalline ZnO (AZO) thin films were deposited by pulsed laser deposition (PLD) on commercial gold-based interdigitated electrodes (IDE) on glass substrates. Surface morphology and structure were characterized using Correlative Probe and Electron Microscopy (CPEM), combining Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) to perform spatially correlated measurements. Longer deposition resulted in the growth of larger crystals and thicker ZnO layers, while Al doping only slightly affected grain size and reduced growth rate. Optical and optoelectronic properties were investigated by photothermal deflection (PDS) and photocurrent spectroscopy (PCS). The mobility edge was found to lie approximately 0.3 eV below the band gap. Space-charge-limited currents were observed at low voltages. Persistent photoconductivity indicates potential issues with charge transport.n
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2025
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Physica Scripta
ISSN
0031-8949
e-ISSN
1402-4896
Svazek periodika
100
Číslo periodika v rámci svazku
11
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
8
Strana od-do
115910
Kód UT WoS článku
001610665200001
EID výsledku v databázi Scopus
2-s2.0-105033786104