Mn-doping reveals a thermal gap and natural p-type conductivity in Bi2O2Se

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00640272" target="_blank" >RIV/68378271:_____/25:00640272 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216224:14310/25:00143302 RIV/00216208:11320/25:10506244

Výsledek na webu

<a href="https://hdl.handle.net/11104/0371786" target="_blank" >https://hdl.handle.net/11104/0371786</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/d5ma00543d" target="_blank" >10.1039/d5ma00543d</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Mn-doping reveals a thermal gap and natural p-type conductivity in Bi2O2Se

Popis výsledku v původním jazyce

Bi2O2Se is a semiconductor that is being intensively studied due to its many extraordinary properties. Since about 2010, research on polycrystals has focused on thermoelectric materials. For the last 10 years, single crystal research has been driven by its quasi 2D structure with unexpectedly high permittivity (εr ≈ 500), which promotes high electron mobility. Bi2O2Se thus outperforms other 2D materials in many parameters. However, the high permittivity is also responsible for the extremely low critical concentration of the metal–insulator transition (n ≈ 1015 cm-3). Thus, Bi2O2Se is so far only available as an n-type semiconductor largely with metal-like properties, although the electron concentration can range over 6 orders of magnitude (n ≈ 1015–1021 cm-3), reportedly due to the very high concentration of selenium vacancies or selenium antisites on the Bi site.

Název v anglickém jazyce

Mn-doping reveals a thermal gap and natural p-type conductivity in Bi2O2Se

Popis výsledku anglicky

Bi2O2Se is a semiconductor that is being intensively studied due to its many extraordinary properties. Since about 2010, research on polycrystals has focused on thermoelectric materials. For the last 10 years, single crystal research has been driven by its quasi 2D structure with unexpectedly high permittivity (εr ≈ 500), which promotes high electron mobility. Bi2O2Se thus outperforms other 2D materials in many parameters. However, the high permittivity is also responsible for the extremely low critical concentration of the metal–insulator transition (n ≈ 1015 cm-3). Thus, Bi2O2Se is so far only available as an n-type semiconductor largely with metal-like properties, although the electron concentration can range over 6 orders of magnitude (n ≈ 1015–1021 cm-3), reportedly due to the very high concentration of selenium vacancies or selenium antisites on the Bi site.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA22-05919S" target="_blank" >GA22-05919S: Vrstevnaté polovodiče Bi2O2Se dopované přechodnými kovy: korelace transportních, magnetických a termoelektrických vlastností</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Advances

ISSN

2633-5409

e-ISSN

2633-5409

Svazek periodika

6

Číslo periodika v rámci svazku

20

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

7526-7534

Kód UT WoS článku

001576315100001

EID výsledku v databázi Scopus

2-s2.0-105018726606