Extraneous doping and its necessary preconditions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F24%3A39921838" target="_blank" >RIV/00216275:25310/24:39921838 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/24:00602884

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/abs/pii/S0927025624003598?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/abs/pii/S0927025624003598?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.commatsci.2024.113138" target="_blank" >10.1016/j.commatsci.2024.113138</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Extraneous doping and its necessary preconditions

Popis výsledku v původním jazyce

Modulation doping in semiconductors has attracted much interest because of its ability to provide a reasonable concentration of free carriers without compromising their mobility, which is significantly reduced by conventional doping. It is very rare to find structures such as Bi2O2Se, which can be thought of as having a separate &quot;&quot;doping part&quot;&quot; (Se) and &quot;&quot;conducting part&quot;&quot; (Bi2O2). Such a structure allows a high carrier mobility at reasonable carrier concentrations. These structures can be viewed as natural electronic composites and this process is often referred to as modulation or delta doping. In this study, we explore and discuss the possibilities of similar but artificial electronic composites - materials doped due to the presence of a foreign phase. Although, such a doping is probably almost ubiquitous in heterogeneous systems, it is very unlikely to provide a reasonably high and homogeneous concentration (10^(18) cm^(-3)) of free charge carriers. Rather, the foreign phase often merely modifies the stoichiometry of the matrix and thus the concentration of native point defects and hence free charge carriers. However, our study shows that although the chance of achieving effective modulation doping is small for 3D structures, it increases significantly for both 1D and 2D structures for low-volume nanoinclusions (&lt;10 nm^(3)). This work also provides guidance on the proper choice of material pairs with respect to modulation doping.

Název v anglickém jazyce

Extraneous doping and its necessary preconditions

Popis výsledku anglicky

Modulation doping in semiconductors has attracted much interest because of its ability to provide a reasonable concentration of free carriers without compromising their mobility, which is significantly reduced by conventional doping. It is very rare to find structures such as Bi2O2Se, which can be thought of as having a separate &quot;&quot;doping part&quot;&quot; (Se) and &quot;&quot;conducting part&quot;&quot; (Bi2O2). Such a structure allows a high carrier mobility at reasonable carrier concentrations. These structures can be viewed as natural electronic composites and this process is often referred to as modulation or delta doping. In this study, we explore and discuss the possibilities of similar but artificial electronic composites - materials doped due to the presence of a foreign phase. Although, such a doping is probably almost ubiquitous in heterogeneous systems, it is very unlikely to provide a reasonably high and homogeneous concentration (10^(18) cm^(-3)) of free charge carriers. Rather, the foreign phase often merely modifies the stoichiometry of the matrix and thus the concentration of native point defects and hence free charge carriers. However, our study shows that although the chance of achieving effective modulation doping is small for 3D structures, it increases significantly for both 1D and 2D structures for low-volume nanoinclusions (&lt;10 nm^(3)). This work also provides guidance on the proper choice of material pairs with respect to modulation doping.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20500 - Materials engineering

Projekt

<a href="/cs/project/GA22-05919S" target="_blank" >GA22-05919S: Vrstevnaté polovodiče Bi2O2Se dopované přechodnými kovy: korelace transportních, magnetických a termoelektrických vlastností</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Computational Materials Science

ISSN

0927-0256

e-ISSN

1879-0801

Svazek periodika

243

Číslo periodika v rámci svazku

July 2024

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

113138

Kód UT WoS článku

001249078300001

EID výsledku v databázi Scopus

2-s2.0-85194375521