Electronic properties of Fe impurities in SnS van der Waals crystals - Revealing high-mobility holes

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F24%3A39921666" target="_blank" >RIV/00216275:25310/24:39921666 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/24:00602721 RIV/00216208:11320/24:10473709 RIV/00216224:14310/24:00135597

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0921510723008905" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0921510723008905</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mseb.2023.117148" target="_blank" >10.1016/j.mseb.2023.117148</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electronic properties of Fe impurities in SnS van der Waals crystals - Revealing high-mobility holes

Popis výsledku v původním jazyce

Defect control is critical to achieve long carrier lifetimes in semiconductors. SnS is a promising thermoelectric and photovoltaic material, in which native defects play a detrimental role, particularly in photovoltaics. In this study, we investigated the Fe-doping of SnS and the interaction of Fe impurities with native defects in a series of single crystals of Sn1-xFexS up to concentrations of x = 0.05. Although the doped single crystals appear rather disordered, the hole mobility is very high (similar to 8500 cm(2)V(-1)s(-1) at 30 K for Sn0.99Fe0.01S), suggesting that holemediated charge transport in this material is largely insensitive to extrinsic impurities. Charge transport analysis suggests that the incorporation of Fe atoms leads to the healing of the intrinsic defect structure and the exclusion of minority electrons from charge transport, allowing the observation of high hole mobility.

Název v anglickém jazyce

Electronic properties of Fe impurities in SnS van der Waals crystals - Revealing high-mobility holes

Popis výsledku anglicky

Defect control is critical to achieve long carrier lifetimes in semiconductors. SnS is a promising thermoelectric and photovoltaic material, in which native defects play a detrimental role, particularly in photovoltaics. In this study, we investigated the Fe-doping of SnS and the interaction of Fe impurities with native defects in a series of single crystals of Sn1-xFexS up to concentrations of x = 0.05. Although the doped single crystals appear rather disordered, the hole mobility is very high (similar to 8500 cm(2)V(-1)s(-1) at 30 K for Sn0.99Fe0.01S), suggesting that holemediated charge transport in this material is largely insensitive to extrinsic impurities. Charge transport analysis suggests that the incorporation of Fe atoms leads to the healing of the intrinsic defect structure and the exclusion of minority electrons from charge transport, allowing the observation of high hole mobility.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Science &amp; Engineering B: Solid-State Materials for Advanced Technology

ISSN

0921-5107

e-ISSN

1873-4944

Svazek periodika

301

Číslo periodika v rámci svazku

March 2024

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

10

Strana od-do

117148

Kód UT WoS článku

001155796300001

EID výsledku v databázi Scopus

2-s2.0-85181775556