Exploring the design and measurements of next-generation 4H-SiC LGADs

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00640825" target="_blank" >RIV/68378271:_____/25:00640825 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21340/25:00385868

Výsledek na webu

<a href="https://doi.org/10.1016/j.nima.2025.170742" target="_blank" >https://doi.org/10.1016/j.nima.2025.170742</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nima.2025.170742" target="_blank" >10.1016/j.nima.2025.170742</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Exploring the design and measurements of next-generation 4H-SiC LGADs

Popis výsledku v původním jazyce

This contribution presents the design, production, and initial testing of newly developed 4H-SiC Low Gain Avalanche Detectors (LGADs). The evaluation includes performance metrics such as the internal gain layer’s efficiency in enhancing signal generation. Initial laboratory and Transient Current Technique (TCT) measurements provide insight into the device’s stability and response to the signal. Due to the increase of availability provided by the industry, 4H-SiC is emerging as a strong candidate for the next-generation of semiconductor detectors. Such sensors are promising due to the inherent radiation tolerance of 4H-SiC and its stable operation across a wide temperature range. However, due to the wider-bandgap of 4H-SiC compared to standard silicon, and difficulty to produce high-quality layers thicker than 50 μ m, an internal charge multiplication layer needs to be introduced. The presented 4H-SiC LGADs, fabricated by onsemi, are optimized for an N-type substrate/epi wafer. The initial TCT and laboratory test results demonstrate fast charge collection and uniform multiplication across multiple samples produced on a single wafer. n•First systematic electrical characterization of 4H-SiC LGADs.n•High production yield and stability of 4H-SiC LGADs from electrical testing.n•First particle detection using silicon carbide LGADs.•Matching gain measurement in from TCT and beta source tests.n•Timing precision of silicon carbide LGADs down to 100 ps.n

Název v anglickém jazyce

Exploring the design and measurements of next-generation 4H-SiC LGADs

Popis výsledku anglicky

This contribution presents the design, production, and initial testing of newly developed 4H-SiC Low Gain Avalanche Detectors (LGADs). The evaluation includes performance metrics such as the internal gain layer’s efficiency in enhancing signal generation. Initial laboratory and Transient Current Technique (TCT) measurements provide insight into the device’s stability and response to the signal. Due to the increase of availability provided by the industry, 4H-SiC is emerging as a strong candidate for the next-generation of semiconductor detectors. Such sensors are promising due to the inherent radiation tolerance of 4H-SiC and its stable operation across a wide temperature range. However, due to the wider-bandgap of 4H-SiC compared to standard silicon, and difficulty to produce high-quality layers thicker than 50 μ m, an internal charge multiplication layer needs to be introduced. The presented 4H-SiC LGADs, fabricated by onsemi, are optimized for an N-type substrate/epi wafer. The initial TCT and laboratory test results demonstrate fast charge collection and uniform multiplication across multiple samples produced on a single wafer. n•First systematic electrical characterization of 4H-SiC LGADs.n•High production yield and stability of 4H-SiC LGADs from electrical testing.n•First particle detection using silicon carbide LGADs.•Matching gain measurement in from TCT and beta source tests.n•Timing precision of silicon carbide LGADs down to 100 ps.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10303 - Particles and field physics

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments & Methods in Physics Research Section A

ISSN

0168-9002

e-ISSN

1872-9576

Svazek periodika

1080

Číslo periodika v rámci svazku

Nov

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

170742

Kód UT WoS článku

001523233600005

EID výsledku v databázi Scopus

2-s2.0-105008990791