First generation 4H-SiC LGAD production and its performance evaluation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00644706" target="_blank" >RIV/68378271:_____/25:00644706 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21340/25:00385873

Výsledek na webu

<a href="https://hdl.handle.net/11104/0374585" target="_blank" >https://hdl.handle.net/11104/0374585</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/20/08/C08022" target="_blank" >10.1088/1748-0221/20/08/C08022</a>

Jazyk výsledku

angličtina

Název v původním jazyce

First generation 4H-SiC LGAD production and its performance evaluation

Popis výsledku v původním jazyce

This contribution will delve into the design and performance of the newly produced Silicon Carbide Low Gain Avalanche Detectors (4H-SiC LGADs) and provide a comprehensive summary of their measured characteristics. This includes an analysis of the detector's performance, temperature stability, and the effectiveness of the internal gain layer in improving signal generation. The 4H-SiC is re-emerging as a strong candidate for the next generation of semiconductor detectors. This material offers several advantages, including high radiation tolerance and the ability to operate over a wide range of temperatures without significant annealing effects. However, the signals generated by minimum ionizing particles in the 4H-SiC detector are lower compared to the signal produced by standard silicon detectors due to their higher bandgap energy [1]. This is addressed by implementing a charge multiplication layer, which results in the intrinsic gain of the device. The presented 4H-SiC LGADs produced by onsemi are specifically designed and optimized for fabrication on the n-type substrate/epi wafer with the gain layer implanted approximately 1 μm below the surface. The first iteration of these LGAD structures was manufactured in early 2024 and since then has undergone laboratory evaluation. The measured properties of these detectors align well with the predictions arising from the extensive TCAD simulation studies.

Název v anglickém jazyce

First generation 4H-SiC LGAD production and its performance evaluation

Popis výsledku anglicky

This contribution will delve into the design and performance of the newly produced Silicon Carbide Low Gain Avalanche Detectors (4H-SiC LGADs) and provide a comprehensive summary of their measured characteristics. This includes an analysis of the detector's performance, temperature stability, and the effectiveness of the internal gain layer in improving signal generation. The 4H-SiC is re-emerging as a strong candidate for the next generation of semiconductor detectors. This material offers several advantages, including high radiation tolerance and the ability to operate over a wide range of temperatures without significant annealing effects. However, the signals generated by minimum ionizing particles in the 4H-SiC detector are lower compared to the signal produced by standard silicon detectors due to their higher bandgap energy [1]. This is addressed by implementing a charge multiplication layer, which results in the intrinsic gain of the device. The presented 4H-SiC LGADs produced by onsemi are specifically designed and optimized for fabrication on the n-type substrate/epi wafer with the gain layer implanted approximately 1 μm below the surface. The first iteration of these LGAD structures was manufactured in early 2024 and since then has undergone laboratory evaluation. The measured properties of these detectors align well with the predictions arising from the extensive TCAD simulation studies.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10303 - Particles and field physics

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

1748-0221

Svazek periodika

20

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

C08022

Kód UT WoS článku

001574279000001

EID výsledku v databázi Scopus

2-s2.0-105014173562