Evolution of giant exchange bias with ferromagnetic ordering and a robust memory effect by strain engineering MoS2 in weak antiferromagnetic gating

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00642151" target="_blank" >RIV/68378271:_____/25:00642151 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0372076" target="_blank" >https://hdl.handle.net/11104/0372076</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/D5MA00565E" target="_blank" >10.1039/D5MA00565E</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Evolution of giant exchange bias with ferromagnetic ordering and a robust memory effect by strain engineering MoS2 in weak antiferromagnetic gating

Popis výsledku v původním jazyce

The emergence of 2D ferromagnetism in MoS2 layers induced by an inherently non-magnetic material like NiOOH is an interesting area of research. This result is of widespread technological importance if additionally associated with magnetic exchange correlations that show promising memory effects. In this work, we show that a giant exchange bias is housed within highly strained 2D MoS2 multilayers by interfacing with the thin weakly antiferromagnetic β-NiOOH phase. The robustness and magnitude of such zero-field-cooled exchange bias emerge from the unique sublattice spin configuration of β-NiOOH, which serves as a source of surface uncompensated moments, while highly strained 2D MoS2 acts as an active pinning layer in the hybrid. The exchange coupling between the weak antiferromagnetic layer and the adjacent moment-induced ferromagnetic layer is strong enough to show a near-room temperature thermoremanent (TRM) memory effect in magnetization states, which is newly observed for 2D hybrid materials. Upon manifesting the vertical type junction, this hybrid material also shows non-volatile electrical bistable states with a low operating bias voltage (1.25 V) and high ON/OFF ratio (6 × 102), along with hysteretic magnetoresistance, which can be useful in 2D-based spintronic applications. First-principles calculations also verified such charge transfer interactions at the interface of the hybrid structure.n

Název v anglickém jazyce

Evolution of giant exchange bias with ferromagnetic ordering and a robust memory effect by strain engineering MoS2 in weak antiferromagnetic gating

Popis výsledku anglicky

The emergence of 2D ferromagnetism in MoS2 layers induced by an inherently non-magnetic material like NiOOH is an interesting area of research. This result is of widespread technological importance if additionally associated with magnetic exchange correlations that show promising memory effects. In this work, we show that a giant exchange bias is housed within highly strained 2D MoS2 multilayers by interfacing with the thin weakly antiferromagnetic β-NiOOH phase. The robustness and magnitude of such zero-field-cooled exchange bias emerge from the unique sublattice spin configuration of β-NiOOH, which serves as a source of surface uncompensated moments, while highly strained 2D MoS2 acts as an active pinning layer in the hybrid. The exchange coupling between the weak antiferromagnetic layer and the adjacent moment-induced ferromagnetic layer is strong enough to show a near-room temperature thermoremanent (TRM) memory effect in magnetization states, which is newly observed for 2D hybrid materials. Upon manifesting the vertical type junction, this hybrid material also shows non-volatile electrical bistable states with a low operating bias voltage (1.25 V) and high ON/OFF ratio (6 × 102), along with hysteretic magnetoresistance, which can be useful in 2D-based spintronic applications. First-principles calculations also verified such charge transfer interactions at the interface of the hybrid structure.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/EH22_008%2F0004596" target="_blank" >EH22_008/0004596: Senzory a detektory pro informační společnost budoucnosti</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Advances

ISSN

2633-5409

e-ISSN

2633-5409

Svazek periodika

6

Číslo periodika v rámci svazku

23

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

18

Strana od-do

9150-9167

Kód UT WoS článku

001603042800001

EID výsledku v databázi Scopus

2-s2.0-105022604783