Thickness dependent interplay between trion binding energy and electron density in CVD-grown MoS2

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00643810" target="_blank" >RIV/68378271:_____/25:00643810 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/25:00387330

Výsledek na webu

<a href="https://hdl.handle.net/11104/0374171" target="_blank" >https://hdl.handle.net/11104/0374171</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1402-4896/ae26db" target="_blank" >10.1088/1402-4896/ae26db</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Thickness dependent interplay between trion binding energy and electron density in CVD-grown MoS2

Popis výsledku v původním jazyce

Among the transition metal dichalcogenides, single layer MoS2 has drawn great attention due to its direct bandgap of approximately 1.9 eV at room temperature, exhibiting extremely high excitonic photoluminescence in the visible range, making it a promising material for opto-electronic applications. In this work, we synthesized MoS2 on a Si/SiO2 substrate using a single-step atmospheric pressure chemical vapor deposition process, successfully yielding bilayer to few layered MoS2 films. The layer dependence of the as-grown MoS2 layers was analyzed from the peak energy difference (Δ) between the in-plane (E2g) and out-of-plane (A1g) phonon modes in the Raman spectra to quantify the specific number of layers within the MoS2 flake (2–15 layers). Room-temperature photoluminescence characteristics of the excitonic emission exhibited a redshift in energy by 0.04 eV as the number of layers increased in MoS2. An increase in the number of layers exhibited a decreasing dispersion of trion binding energy from a standardized fitting procedure of the PL spectra under appropriate boundary conditions. Henceforth, we observe a thickness dependent inversely related interplay between trion binding energy and electron density (n) due to defects in MoS2, which is crucial for future opto-electronic applications.

Název v anglickém jazyce

Thickness dependent interplay between trion binding energy and electron density in CVD-grown MoS2

Popis výsledku anglicky

Among the transition metal dichalcogenides, single layer MoS2 has drawn great attention due to its direct bandgap of approximately 1.9 eV at room temperature, exhibiting extremely high excitonic photoluminescence in the visible range, making it a promising material for opto-electronic applications. In this work, we synthesized MoS2 on a Si/SiO2 substrate using a single-step atmospheric pressure chemical vapor deposition process, successfully yielding bilayer to few layered MoS2 films. The layer dependence of the as-grown MoS2 layers was analyzed from the peak energy difference (Δ) between the in-plane (E2g) and out-of-plane (A1g) phonon modes in the Raman spectra to quantify the specific number of layers within the MoS2 flake (2–15 layers). Room-temperature photoluminescence characteristics of the excitonic emission exhibited a redshift in energy by 0.04 eV as the number of layers increased in MoS2. An increase in the number of layers exhibited a decreasing dispersion of trion binding energy from a standardized fitting procedure of the PL spectra under appropriate boundary conditions. Henceforth, we observe a thickness dependent inversely related interplay between trion binding energy and electron density (n) due to defects in MoS2, which is crucial for future opto-electronic applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Scripta

ISSN

0031-8949

e-ISSN

1402-4896

Svazek periodika

100

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

125947

Kód UT WoS článku

001645186600001

EID výsledku v databázi Scopus

2-s2.0-105034108251