Improving voc of lead halide perovskites solar cells by plasma treatment
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00644749" target="_blank" >RIV/68378271:_____/25:00644749 - isvavai.cz</a>
Výsledek na webu
—
DOI - Digital Object Identifier
—
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Improving voc of lead halide perovskites solar cells by plasma treatment
Popis výsledku v původním jazyce
Recombination of electrons and holes at the defect states of perovskite absorber limits the power conversion efficiency of the organic-inorganic halide perovskite solar cells. Recently, with the help of in-situ PL and GIWAXS measurements, we have shown that the defects are formed mainly at the grain boundaries and surface.1,2 Therefore, it is necessary to selectively passivate surface and grain boundaries. It was shown that the removal of thin surface layers using mechanical,3 or laser4 polishing may improve the performance of perovskite thin films and PCEs. In our work, we performed an initial study examining the effect of the DCSBD (the diffuse coplanar surface barrier discharge) plasma on perovskite thin films. The sample was placed in the vicinity of the plasma and exposed to the plasma for different duration. Using in-situ photoluminescence (PL) spectroscopy, we found that the exposure of perovskite surface to plasma in nitrogen atmosphere affects the PL efficiency. After initial decrease of the PL intensity caused by surface defects created by exposure to plasma, the PL recovers, reaching 50-200 % of its original value. This means that the PT has a positive impact on defect densities in perovskite film. The plasma treatment results in improvement of Voc of 15 – 60 mV depending on the duration of the PT. We believe this method has potential as an intermediate step before the deposition of a passivation layer on the perovskite. Additionally, the DCSBD plasma treatment is already used in different industrial applications and thus it is ready for use in large production lines.
Název v anglickém jazyce
Improving voc of lead halide perovskites solar cells by plasma treatment
Popis výsledku anglicky
Recombination of electrons and holes at the defect states of perovskite absorber limits the power conversion efficiency of the organic-inorganic halide perovskite solar cells. Recently, with the help of in-situ PL and GIWAXS measurements, we have shown that the defects are formed mainly at the grain boundaries and surface.1,2 Therefore, it is necessary to selectively passivate surface and grain boundaries. It was shown that the removal of thin surface layers using mechanical,3 or laser4 polishing may improve the performance of perovskite thin films and PCEs. In our work, we performed an initial study examining the effect of the DCSBD (the diffuse coplanar surface barrier discharge) plasma on perovskite thin films. The sample was placed in the vicinity of the plasma and exposed to the plasma for different duration. Using in-situ photoluminescence (PL) spectroscopy, we found that the exposure of perovskite surface to plasma in nitrogen atmosphere affects the PL efficiency. After initial decrease of the PL intensity caused by surface defects created by exposure to plasma, the PL recovers, reaching 50-200 % of its original value. This means that the PT has a positive impact on defect densities in perovskite film. The plasma treatment results in improvement of Voc of 15 – 60 mV depending on the duration of the PT. We believe this method has potential as an intermediate step before the deposition of a passivation layer on the perovskite. Additionally, the DCSBD plasma treatment is already used in different industrial applications and thus it is ready for use in large production lines.
Klasifikace
Druh
O - Ostatní výsledky
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2025
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů