Low dose gamma irradiation study of ATLAS ITk MD8 diodes
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00645355" target="_blank" >RIV/68378271:_____/25:00645355 - isvavai.cz</a>
Výsledek na webu
<a href="https://hdl.handle.net/11104/0375169" target="_blank" >https://hdl.handle.net/11104/0375169</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1748-0221/20/08/C08012" target="_blank" >10.1088/1748-0221/20/08/C08012</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Low dose gamma irradiation study of ATLAS ITk MD8 diodes
Popis výsledku v původním jazyce
Silicon strip detectors developed for the Inner Tracker (ITk) of the ATLAS experiment will operate in a harsh radiation environment of the HL-LHC accelerator. The ITk is thus designed to endure a total fluence of 1.6 × 1015 1-MeV neq/cm2 and a total ionizing dose (TID) of 66 Mrad in the strip detector region. A radiation-hard n+-in-p technology is implemented in the ITk strip sensors. To achieve the required radiation hardness, extensive irradiation studies were conducted during sensor development, primarily performed up to the maximal expected total fluence and TID to ensure the full functionality of the detector at its end-of-life. These studies included irradiations of sensors with various particle types and energies, including the 60Co γ-rays. Our previous results obtained for γ-irradiated diodes and strip sensors indicate a linear increase of bulk current with TID, while the surface current saturates at the lowest TID levels checked (66 Mrad), preventing a determination of the exact TID for which the observed saturation occurs. This work presents the results coming from irradiations by 60Co γ-rays to multiple low TIDs, ranging from 0.5 to 100 krad. The detailed study of total, bulk, and surface currents of diodes explores an unknown dependence of surface current on the TID, annealing, and temperature. Additionally, the effect of the p-stop implant between the bias and the guard ring of measured samples is shown. The observations are relevant for the initial operations of the new ATLAS tracker.
Název v anglickém jazyce
Low dose gamma irradiation study of ATLAS ITk MD8 diodes
Popis výsledku anglicky
Silicon strip detectors developed for the Inner Tracker (ITk) of the ATLAS experiment will operate in a harsh radiation environment of the HL-LHC accelerator. The ITk is thus designed to endure a total fluence of 1.6 × 1015 1-MeV neq/cm2 and a total ionizing dose (TID) of 66 Mrad in the strip detector region. A radiation-hard n+-in-p technology is implemented in the ITk strip sensors. To achieve the required radiation hardness, extensive irradiation studies were conducted during sensor development, primarily performed up to the maximal expected total fluence and TID to ensure the full functionality of the detector at its end-of-life. These studies included irradiations of sensors with various particle types and energies, including the 60Co γ-rays. Our previous results obtained for γ-irradiated diodes and strip sensors indicate a linear increase of bulk current with TID, while the surface current saturates at the lowest TID levels checked (66 Mrad), preventing a determination of the exact TID for which the observed saturation occurs. This work presents the results coming from irradiations by 60Co γ-rays to multiple low TIDs, ranging from 0.5 to 100 krad. The detailed study of total, bulk, and surface currents of diodes explores an unknown dependence of surface current on the TID, annealing, and temperature. Additionally, the effect of the p-stop implant between the bias and the guard ring of measured samples is shown. The observations are relevant for the initial operations of the new ATLAS tracker.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10303 - Particles and field physics
Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2025
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Journal of Instrumentation
ISSN
1748-0221
e-ISSN
1748-0221
Svazek periodika
20
Číslo periodika v rámci svazku
8
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
9
Strana od-do
C08012
Kód UT WoS článku
001574276600001
EID výsledku v databázi Scopus
2-s2.0-105013385010