X-Ray Emission from Thin Films on a Substrate - Calculation and Experiments

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F02%3A02079260" target="_blank" >RIV/68407700:21220/02:02079260 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/02:02030210

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

X-Ray Emission from Thin Films on a Substrate - Calculation and Experiments

Popis výsledku v původním jazyce

Monte-Carlo simulation of electron transport in solids is widely used in electron microscopy, spectroscopy and microanalysis. The reliability of physical models incorporated in a Monte-Carlo code is usually checked by comparing with experimental results.Elastic or inelastic collisions are usually considered as the basic interactions of electrons with atoms. In our Monte-Carlo code the single scattering model is employed for simulation of X-ray emission from thin films of Au on the Si substrate. The electron beam energy was in the range 10 - 30 keV, the take-off-angle was 40 deg. The simulated values of X-ray production were calculated in our Monte-Carlo code using several models of ionisation cross-sections. For the emitted intensities the depths of inelastic collision and X-ray absorption were taken into account, then the k-ratios were calculated. These data were compared with experimental values of k-ratios calculated from X-ray intensities of Au M and Au L characteristic lines.

Název v anglickém jazyce

X-Ray Emission from Thin Films on a Substrate - Calculation and Experiments

Popis výsledku anglicky

Monte-Carlo simulation of electron transport in solids is widely used in electron microscopy, spectroscopy and microanalysis. The reliability of physical models incorporated in a Monte-Carlo code is usually checked by comparing with experimental results.Elastic or inelastic collisions are usually considered as the basic interactions of electrons with atoms. In our Monte-Carlo code the single scattering model is employed for simulation of X-ray emission from thin films of Au on the Si substrate. The electron beam energy was in the range 10 - 30 keV, the take-off-angle was 40 deg. The simulated values of X-ray production were calculated in our Monte-Carlo code using several models of ionisation cross-sections. For the emitted intensities the depths of inelastic collision and X-ray absorption were taken into account, then the k-ratios were calculated. These data were compared with experimental values of k-ratios calculated from X-ray intensities of Au M and Au L characteristic lines.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BE - Teoretická fyzika

OECD FORD obor

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Projekt

<a href="/cs/project/GA202%2F02%2F0237" target="_blank" >GA202/02/0237: Elektronový transport při površích pevných látek</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2002

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Mikrochimica Acta

ISSN

0026-3672

e-ISSN

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Svazek periodika

139

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

AT - Rakouská republika

Počet stran výsledku

6

Strana od-do

179-184

Kód UT WoS článku

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EID výsledku v databázi Scopus

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