Characterization of Doped ZnO Thin Film for Ammonia Gas Sensing Application

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F23%3A00372345" target="_blank" >RIV/68407700:21220/23:00372345 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.12693/APhysPolA.144.379" target="_blank" >https://doi.org/10.12693/APhysPolA.144.379</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.12693/APhysPolA.144.379" target="_blank" >10.12693/APhysPolA.144.379</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Characterization of Doped ZnO Thin Film for Ammonia Gas Sensing Application

Popis výsledku v původním jazyce

This paper reports on the characterization of Sn- and Al-doped zinc oxide thin film for potential ammonia gas detection. The sol–gel method has been used to deposit the dopant onto the glass substrate at an annealing temperature of 500°C for three different doping concentrations, which are 0.5, 1.0, and 1.5 at.%. The method used to produce this thin film is sol–gel, as it is cheap, easy, and can be employed at low temperatures. The studies involve the investigation of the morphological structures and electrical and optical properties of doped ZnO. In terms of structural properties, scanning electron microscope images of Sn- and Al-doped ZnO change as the dopant concentration is increased. The doped thin film response and recovery towards 200 ppm of ammonia were observed and recorded. Both dopants show good gas sensing response. The recorded resistance reading suggests that Al is the superior dopant in gas sensing as it produces a low resistance reading of 230 Ω as opposed to 140 kΩ produced by Sn-doped ZnO thin film.

Název v anglickém jazyce

Characterization of Doped ZnO Thin Film for Ammonia Gas Sensing Application

Popis výsledku anglicky

This paper reports on the characterization of Sn- and Al-doped zinc oxide thin film for potential ammonia gas detection. The sol–gel method has been used to deposit the dopant onto the glass substrate at an annealing temperature of 500°C for three different doping concentrations, which are 0.5, 1.0, and 1.5 at.%. The method used to produce this thin film is sol–gel, as it is cheap, easy, and can be employed at low temperatures. The studies involve the investigation of the morphological structures and electrical and optical properties of doped ZnO. In terms of structural properties, scanning electron microscope images of Sn- and Al-doped ZnO change as the dopant concentration is increased. The doped thin film response and recovery towards 200 ppm of ammonia were observed and recorded. Both dopants show good gas sensing response. The recorded resistance reading suggests that Al is the superior dopant in gas sensing as it produces a low resistance reading of 230 Ω as opposed to 140 kΩ produced by Sn-doped ZnO thin film.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Acta Physica Polonica A

ISSN

0587-4246

e-ISSN

1898-794X

Svazek periodika

144

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

PL - Polská republika

Počet stran výsledku

4

Strana od-do

379-382

Kód UT WoS článku

001158652900024

EID výsledku v databázi Scopus

2-s2.0-85181083971