Study of the extrinsic properties of ZnO:Al grown by SILAR technique

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F17%3A43932459" target="_blank" >RIV/49777513:23640/17:43932459 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1007/s10008-017-3514-6" target="_blank" >http://dx.doi.org/10.1007/s10008-017-3514-6</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10008-017-3514-6" target="_blank" >10.1007/s10008-017-3514-6</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Study of the extrinsic properties of ZnO:Al grown by SILAR technique

Popis výsledku v původním jazyce

Aluminum-doped ZnO thin films with pebble-like structures have been successfully deposited on glass substrates by successive ionic layer adsorption reaction method. The effect of percentage composition of the aluminum dopants on the flower-like clusters of the ZnO nanostructures on the structure, morphology, and optical properties was investigated. The ZnO thin films which were crystallized in hexagonal wurtzite structures with crystallite sizes of 44, 51, 56, and 43 nm for the intrinsic and 1, 3, and 5% Al-doped ZnO thin films, respectively. Preferred orientation of crystallites is in all cases in [001] direction perpendicular to the sample surface. The Raman spectroscopy revealed decrease in the intensity of the ZnO characteristic peak due to the substitution of the Zn2+ atoms by the Al3+ and attributed to potential fluctuations of the alloy disorder. The introduction of the Al3+ dopants significantly increased the optical band gap.

Název v anglickém jazyce

Study of the extrinsic properties of ZnO:Al grown by SILAR technique

Popis výsledku anglicky

Aluminum-doped ZnO thin films with pebble-like structures have been successfully deposited on glass substrates by successive ionic layer adsorption reaction method. The effect of percentage composition of the aluminum dopants on the flower-like clusters of the ZnO nanostructures on the structure, morphology, and optical properties was investigated. The ZnO thin films which were crystallized in hexagonal wurtzite structures with crystallite sizes of 44, 51, 56, and 43 nm for the intrinsic and 1, 3, and 5% Al-doped ZnO thin films, respectively. Preferred orientation of crystallites is in all cases in [001] direction perpendicular to the sample surface. The Raman spectroscopy revealed decrease in the intensity of the ZnO characteristic peak due to the substitution of the Zn2+ atoms by the Al3+ and attributed to potential fluctuations of the alloy disorder. The introduction of the Al3+ dopants significantly increased the optical band gap.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

JOURNAL OF SOLID STATE ELECTROCHEMISTRY

ISSN

1432-8488

e-ISSN

—

Svazek periodika

21

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

2621-2628

Kód UT WoS článku

000408002100015

EID výsledku v databázi Scopus

2-s2.0-85013105497