Transient Effects on High Voltage Diode Stack under Reverse Bias

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F03%3A03087762" target="_blank" >RIV/68407700:21230/03:03087762 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Transient Effects on High Voltage Diode Stack under Reverse Bias

Popis výsledku v původním jazyce

This article describes and analzses the fast transient processes that can occur during a local non-destructive breakdown in a circuit consisting of a serial connection of reverse biased high-voltage silicon diodes. Measurements of the reverse current-voltage characteristics of the individual diodes showed that a breakdown had occured. However, this phenomenon is very difficult to study when there are many diodes connected in series in a stack. A physicalmodel was therefore created to show the individuallocal breakdown in this case. The validity of the model was verified by means of circuit simulation of the process under investigation. The statistical significance of the process was considered with respect to the reliability and lifetime of a high-voltage diode stack.

Název v anglickém jazyce

Transient Effects on High Voltage Diode Stack under Reverse Bias

Popis výsledku anglicky

This article describes and analzses the fast transient processes that can occur during a local non-destructive breakdown in a circuit consisting of a serial connection of reverse biased high-voltage silicon diodes. Measurements of the reverse current-voltage characteristics of the individual diodes showed that a breakdown had occured. However, this phenomenon is very difficult to study when there are many diodes connected in series in a stack. A physicalmodel was therefore created to show the individuallocal breakdown in this case. The validity of the model was verified by means of circuit simulation of the process under investigation. The statistical significance of the process was considered with respect to the reliability and lifetime of a high-voltage diode stack.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F01%2F1353" target="_blank" >GA102/01/1353: Elektromagnetická kompatibilita výkonových spínaných zdrojů</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2003

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Microelectronics Reliability

ISSN

0026-2714

e-ISSN

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Svazek periodika

43/4

Číslo periodika v rámci svazku

274

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

557-564

Kód UT WoS článku

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EID výsledku v databázi Scopus

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