One-chip MOS Structure for Temperature Flow Sensor

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00174271" target="_blank" >RIV/68407700:21230/10:00174271 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

One-chip MOS Structure for Temperature Flow Sensor

Popis výsledku v původním jazyce

There is described a MOS structure in the use of flow sensor system in the paper. MOS structure as a temperature sensor allows measurement of temperature gradient. One allows computation of direction of air flow over the structure chip. Four MOS structure of temperature sensors has been used for the design of sensitivity flow sensor. Different arrangements of MOS structure have been designed. Software standard tools have been used for simulation and modeling of structure properties. Maximum values of structure sensitivity in dependence on operating temperature have been computed. The parameters have been used for the design. Suitable structure temperature was found during simulations. Circuit connection of sensor temperature matrix was designed. New results of sensitivity and resolution of MOS sensor systems were obtained. The working efforts were focused on the sensitivity, angle resolution and small power consumption.

Název v anglickém jazyce

One-chip MOS Structure for Temperature Flow Sensor

Popis výsledku anglicky

There is described a MOS structure in the use of flow sensor system in the paper. MOS structure as a temperature sensor allows measurement of temperature gradient. One allows computation of direction of air flow over the structure chip. Four MOS structure of temperature sensors has been used for the design of sensitivity flow sensor. Different arrangements of MOS structure have been designed. Software standard tools have been used for simulation and modeling of structure properties. Maximum values of structure sensitivity in dependence on operating temperature have been computed. The parameters have been used for the design. Suitable structure temperature was found during simulations. Circuit connection of sensor temperature matrix was designed. New results of sensitivity and resolution of MOS sensor systems were obtained. The working efforts were focused on the sensitivity, angle resolution and small power consumption.

Druh

D - Stať ve sborníku

CEP obor

JB - Senzory, čidla, měření a regulace

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F09%2F1601" target="_blank" >GA102/09/1601: Inteligentní mikro a nano struktury pro mikrosenzory realizované s využitím nanotechnologií</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2010 Proceeding Nanotech, Clean Technology, Microtech, Bio nanotech

ISBN

978-1-4398-3421-3

ISSN

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e-ISSN

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Počet stran výsledku

3

Strana od-do

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Název nakladatele

Nano Science and Technology Institute

Místo vydání

Boston

Místo konání akce

Anaheim

Datum konání akce

21. 6. 2010

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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