Design and Technology of High-Power Silicon Devices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00182234" target="_blank" >RIV/68407700:21230/11:00182234 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.mixdes.org/" target="_blank" >http://www.mixdes.org/</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Design and Technology of High-Power Silicon Devices

Popis výsledku v původním jazyce

Power semiconductors are playing a leading role in the power electronics systems,. The most important concepts of today's high-power devices are Phase Controlled Thyristor (PCT), Integrated Gate Commutated Thyristor (IGCT), Insulated Gate Bipolar Transistor (IGBT), and PiN diode. Silicon-based devices are still taking evolutionary steps to gradually increase the current and voltage ratings by utilizing the technologies well established in the IC industry. Beside the well-established Si technologies, thelow-power devices are increasingly utilizing the technologies of SiC and GaN. They are already on the market and in rapidly increasing volumes, but they still occupy only certain areas with relatively lower line voltages and output currents, where increased cost is balanced out by increased application demands.

Název v anglickém jazyce

Design and Technology of High-Power Silicon Devices

Popis výsledku anglicky

Power semiconductors are playing a leading role in the power electronics systems,. The most important concepts of today's high-power devices are Phase Controlled Thyristor (PCT), Integrated Gate Commutated Thyristor (IGCT), Insulated Gate Bipolar Transistor (IGBT), and PiN diode. Silicon-based devices are still taking evolutionary steps to gradually increase the current and voltage ratings by utilizing the technologies well established in the IC industry. Beside the well-established Si technologies, thelow-power devices are increasingly utilizing the technologies of SiC and GaN. They are already on the market and in rapidly increasing volumes, but they still occupy only certain areas with relatively lower line voltages and output currents, where increased cost is balanced out by increased application demands.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2011 Proceedings of the 18th International Conference

ISBN

978-83-932075-1-0

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

17-22

Název nakladatele

Technical University of Lodz

Místo vydání

Lodz

Místo konání akce

Gliwice

Datum konání akce

16. 6. 2011

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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