Optical Properties of Bi-Doped Epoxy Novolak Resin (ENR) Containing Ce, Dy and Y Ions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F12%3A00197072" target="_blank" >RIV/68407700:21230/12:00197072 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1002/app.34945" target="_blank" >http://dx.doi.org/10.1002/app.34945</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/app.34945" target="_blank" >10.1002/app.34945</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optical Properties of Bi-Doped Epoxy Novolak Resin (ENR) Containing Ce, Dy and Y Ions

Popis výsledku v původním jazyce

In this article, we report on the optical properties of Bismuth doped Epoxy Novolak Resin (ENR) co-doped with Dysprosium, Cerium, and Yttrium ions. The polymer layers containing 1.0 to 20.0 at % of Bismuth were fabricated by spin-coating onto silicon orquartz substrates. The properties of the material were studied using several methods with special regards to its potential utilization in photonics devices. Transmission spectra were taken in the range from 350 to 1600 nm, while photoluminescence spectraaround 1300 nm were recorded by using excitation of semiconductor lasers operating at 808 nm and at 980 nm (Ex= 250 mW). Optical properties of the samples were evaluated on the bases of the concentration of the Bismuth ions as well as on the concentrations of the co-doping ions and showed close relations between concentration of the dopants and intensity of the luminescence band at 1300 nm. Our results proved that the Bismuth doped ENR has a strong potential for application in active ph

Název v anglickém jazyce

Optical Properties of Bi-Doped Epoxy Novolak Resin (ENR) Containing Ce, Dy and Y Ions

Popis výsledku anglicky

In this article, we report on the optical properties of Bismuth doped Epoxy Novolak Resin (ENR) co-doped with Dysprosium, Cerium, and Yttrium ions. The polymer layers containing 1.0 to 20.0 at % of Bismuth were fabricated by spin-coating onto silicon orquartz substrates. The properties of the material were studied using several methods with special regards to its potential utilization in photonics devices. Transmission spectra were taken in the range from 350 to 1600 nm, while photoluminescence spectraaround 1300 nm were recorded by using excitation of semiconductor lasers operating at 808 nm and at 980 nm (Ex= 250 mW). Optical properties of the samples were evaluated on the bases of the concentration of the Bismuth ions as well as on the concentrations of the co-doping ions and showed close relations between concentration of the dopants and intensity of the luminescence band at 1300 nm. Our results proved that the Bismuth doped ENR has a strong potential for application in active ph

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/FR-TI3%2F797" target="_blank" >FR-TI3/797: *Výzkum a vývoj technologie polymerních optických vlnově selektivních prvků pro informatiku a senzoriku</a><br>

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of applied polymer science

ISSN

0021-8995

e-ISSN

—

Svazek periodika

125

Číslo periodika v rámci svazku

125

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

710-715

Kód UT WoS článku

000302349700084

EID výsledku v databázi Scopus

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