Properties of Epoxy Novolak Resin Layers Doped with Bismuth for Photoluminescence Near 1300 nm

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00169922" target="_blank" >RIV/68407700:21230/10:00169922 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/60461373:22310/10:00023333 RIV/68378271:_____/10:00396046

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Properties of Epoxy Novolak Resin Layers Doped with Bismuth for Photoluminescence Near 1300 nm

Popis výsledku v původním jazyce

In this paper we report on the optical properties of bismuth ions doped Epoxy Novolak Resin (ENR). The polymer layers containing 1.0 to 20.0 at. % of bismuth were fabricated by spin-coating onto silicon or quartz substrates. The properties of the material were studied using several methods with special regards to its potential utilization in photonics devices. Photoluminescence spectra around 1300 nm were recorded by using excitation of semiconductor lasers operating at 808 nm (Ex= 500 mW). Optical properties of bismuth doped Epoxy Novolak Resin were evaluated on the bases of the concentration of the bismuth ions involved in the samples and showed, e.g. close relations between concentration of the dopants and intensity of the luminescence band at 1300nm. IR spectra showed only negligible changes in the original substrate resin. Our results proved that the bismuth doped ENR have a potential for utilization in photonics devices.

Název v anglickém jazyce

Properties of Epoxy Novolak Resin Layers Doped with Bismuth for Photoluminescence Near 1300 nm

Popis výsledku anglicky

In this paper we report on the optical properties of bismuth ions doped Epoxy Novolak Resin (ENR). The polymer layers containing 1.0 to 20.0 at. % of bismuth were fabricated by spin-coating onto silicon or quartz substrates. The properties of the material were studied using several methods with special regards to its potential utilization in photonics devices. Photoluminescence spectra around 1300 nm were recorded by using excitation of semiconductor lasers operating at 808 nm (Ex= 500 mW). Optical properties of bismuth doped Epoxy Novolak Resin were evaluated on the bases of the concentration of the bismuth ions involved in the samples and showed, e.g. close relations between concentration of the dopants and intensity of the luminescence band at 1300nm. IR spectra showed only negligible changes in the original substrate resin. Our results proved that the bismuth doped ENR have a potential for utilization in photonics devices.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of applied polymer science

ISSN

0021-8995

e-ISSN

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Svazek periodika

117

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

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Kód UT WoS článku

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EID výsledku v databázi Scopus

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