Description of the Functional Blocks for the Cross-Coupled Charge Pump Design Algorithm
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F17%3A00314260" target="_blank" >RIV/68407700:21230/17:00314260 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.23919/AE.2017.8053594" target="_blank" >http://dx.doi.org/10.23919/AE.2017.8053594</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.23919/AE.2017.8053594" target="_blank" >10.23919/AE.2017.8053594</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Description of the Functional Blocks for the Cross-Coupled Charge Pump Design Algorithm
Popis výsledku v původním jazyce
This paper presents the circuit model that is used for the cross-coupled charge pump design algorithm. Symbolic description of the pump stage model as an analog functional block for high-voltage application is firstly discussed. Design process has been done by using simplified BSIM model equations assuming the long channel MOSFET. Characteristics have been verified by ELDO Spice and compared with the found relationships. Static and dynamic parameters of the subcircuit have been tested in two-stages structure by LT Spice simulator. Analysis results show the consistency between model and real circuits characteristics under given conditions. Complex model provides the reliable results for significantly smaller strange capacitances in comparision with the main pump capacitances. The model can be used for design and prediction of the pump parameters without long-time simulation process. The strong inversion region of MOSFET is expected, thus equations are correct for other MOSFET models that are used in chip design (PSP).
Název v anglickém jazyce
Description of the Functional Blocks for the Cross-Coupled Charge Pump Design Algorithm
Popis výsledku anglicky
This paper presents the circuit model that is used for the cross-coupled charge pump design algorithm. Symbolic description of the pump stage model as an analog functional block for high-voltage application is firstly discussed. Design process has been done by using simplified BSIM model equations assuming the long channel MOSFET. Characteristics have been verified by ELDO Spice and compared with the found relationships. Static and dynamic parameters of the subcircuit have been tested in two-stages structure by LT Spice simulator. Analysis results show the consistency between model and real circuits characteristics under given conditions. Complex model provides the reliable results for significantly smaller strange capacitances in comparision with the main pump capacitances. The model can be used for design and prediction of the pump parameters without long-time simulation process. The strong inversion region of MOSFET is expected, thus equations are correct for other MOSFET models that are used in chip design (PSP).
Klasifikace
Druh
D - Stať ve sborníku
CEP obor
—
OECD FORD obor
20201 - Electrical and electronic engineering
Návaznosti výsledku
Projekt
—
Návaznosti
S - Specificky vyzkum na vysokych skolach
Ostatní
Rok uplatnění
2017
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název statě ve sborníku
2017 International Conference on Applied Electronics
ISBN
978-80-261-0641-8
ISSN
1803-7232
e-ISSN
—
Počet stran výsledku
4
Strana od-do
107-110
Název nakladatele
University of West Bohemia
Místo vydání
Pilsen
Místo konání akce
Pilsen
Datum konání akce
5. 9. 2017
Typ akce podle státní příslušnosti
WRD - Celosvětová akce
Kód UT WoS článku
—