Guidelines on the switch transistors sizing using the symbolic description for the cross-coupled charge pump

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F17%3A00314250" target="_blank" >RIV/68407700:21230/17:00314250 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.radioeng.cz/papers/2017-3.htm" target="_blank" >https://www.radioeng.cz/papers/2017-3.htm</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.13164/re.2017.0781" target="_blank" >10.13164/re.2017.0781</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Guidelines on the switch transistors sizing using the symbolic description for the cross-coupled charge pump

Popis výsledku v původním jazyce

This paper presents a symbolic description of the design process of the switch transistors for the cross-coupled charge pump applications. Discrete-time analog circuits are usually designed by the numerical algorithms in the professional simulator software which can be an extremely time-consuming process in contrast to described analytical procedure. The significant part of the pumping losses is caused by the reverse current through the switch transistors due to the continuous-time voltage change on the main capacitors. The design process is based on the analytical expression of the time response characteristics of the pump stage as an analog system with using BSIM model equations. The main benefit of the article is the analytical transistors sizing formula so that the maximum voltage gain is achieved. The diode transistor is dimensioned for the pump requirements, as the maximal pump output ripple voltage, current, etc. The characteristics of the proposed circuit have been verified by simulation in ELDO Spice. Results are valid for N-stage charge pump and also applicable for other model equations as PSP, EKV.

Název v anglickém jazyce

Guidelines on the switch transistors sizing using the symbolic description for the cross-coupled charge pump

Popis výsledku anglicky

This paper presents a symbolic description of the design process of the switch transistors for the cross-coupled charge pump applications. Discrete-time analog circuits are usually designed by the numerical algorithms in the professional simulator software which can be an extremely time-consuming process in contrast to described analytical procedure. The significant part of the pumping losses is caused by the reverse current through the switch transistors due to the continuous-time voltage change on the main capacitors. The design process is based on the analytical expression of the time response characteristics of the pump stage as an analog system with using BSIM model equations. The main benefit of the article is the analytical transistors sizing formula so that the maximum voltage gain is achieved. The diode transistor is dimensioned for the pump requirements, as the maximal pump output ripple voltage, current, etc. The characteristics of the proposed circuit have been verified by simulation in ELDO Spice. Results are valid for N-stage charge pump and also applicable for other model equations as PSP, EKV.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Radioengineering

ISSN

1210-2512

e-ISSN

—

Svazek periodika

26

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

10

Strana od-do

781-790

Kód UT WoS článku

000411297800021

EID výsledku v databázi Scopus

2-s2.0-85029575156